The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 21, 2025

Filed:

Aug. 23, 2022
Applicant:

Transphorm Technology, Inc., Goleta, CA (US);

Inventors:

Carl Joseph Neufeld, Goleta, CA (US);

David Michael Rhodes, Santa Barbara, CA (US);

Likun Shen, Goleta, CA (US);

Ronald Avrom Barr, Santa Barbara, CA (US);

Assignee:

Transphorm Technology, Inc., Goleta, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/07 (2006.01); H01L 23/00 (2006.01); H01L 23/498 (2006.01); H10D 30/47 (2025.01);
U.S. Cl.
CPC ...
H01L 25/072 (2013.01); H01L 23/49844 (2013.01); H01L 24/46 (2013.01); H01L 24/49 (2013.01); H10D 30/47 (2025.01); H10D 30/471 (2025.01); H01L 2224/46 (2013.01); H01L 2224/48135 (2013.01); H01L 2224/48157 (2013.01); H01L 2224/4903 (2013.01); H01L 2224/49111 (2013.01); H01L 2224/49112 (2013.01); H01L 2224/4912 (2013.01);
Abstract

An electronic component includes at least three terminals extending from a component package. The component includes a depletion-mode III-N transistor, and an enhancement-mode transistor in the package. A gate electrode of the enhancement-mode transistor is electrically connected to the first terminal, a source electrode of the enhancement-mode transistor and a gate electrode of the depletion-mode III-N transistor are electrically connected to the second terminal, a drain electrode of the enhancement-mode transistor is electrically connected to a source electrode of the depletion-mode III-N transistor, and a drain electrode of the depletion-mode III-N transistor is electrically connected to the third terminal. The drain electrode includes multiple drain pads each sequentially a further distance from the third terminal, where a wire-bond extends from each drain pad to the third terminal, each wire-bond having a length, where a diameter of the longest wire-bond is greater than the diameter of the shortest wire-bond.


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