The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 2026
Filed:
Sep. 17, 2021
Transphorm Technology, Inc., Goleta, CA (US);
Geetak Gupta, Goleta, CA (US);
Umesh Mishra, Montecito, CA (US);
Davide Bisi, Goleta, CA (US);
David Michael Rhodes, Santa Barbara, CA (US);
Rakesh K. Lal, Isla Vista, CA (US);
Carl Joseph Neufeld, Goleta, CA (US);
Transphorm Technology, Inc., Goleta, CA (US);
Abstract
A semiconductor device comprises a III-N device including an insulating substrate. The insulating substrate includes a first side and a second side. The device further includes a III-N material structure on a first side of the insulating substrate, and a gate electrode, a source electrode, and a drain electrode on a side of the III-N material structure opposite the substrate. A backmetal layer on the second side of the insulating substrate, and a via hole is formed through the III-N material structure and the insulating substrate. A metal formed in the via-hole is electrically connected to the drain electrode on the first side of the substrate and electrically connected to the backmetal layer on the second side of the substrate.