The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 01, 2016

Filed:

Nov. 11, 2011
Applicants:

Hiroshi Endo, Kawasaki, JP;

Toshihiro Ohki, Kawasaki, JP;

Toshihide Kikkawa, Kawasaki, JP;

Inventors:

Hiroshi Endo, Kawasaki, JP;

Toshihiro Ohki, Kawasaki, JP;

Toshihide Kikkawa, Kawasaki, JP;

Assignee:

FUJITSU LIMITED, Kawasaki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/778 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7787 (2013.01); H01L 29/4236 (2013.01); H01L 29/42356 (2013.01); H01L 29/42364 (2013.01); H01L 29/66462 (2013.01); H01L 29/7839 (2013.01); H01L 29/2003 (2013.01);
Abstract

A semiconductor device includes a first semiconductor layer disposed over a substrate, a second semiconductor layer disposed over the first semiconductor layer, a gate recess disposed, through removal of a part of or all the second semiconductor layer, in a predetermined region over the first semiconductor layer, an insulating film disposed over the gate recess and the second semiconductor layer, a gate electrode disposed over the gate recess with the insulating film therebetween, and a source electrode and a drain electrode disposed over the first semiconductor layer or the second semiconductor layer, whereby a central portion of the gate recess is higher than a peripheral portion of the gate recess.


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