The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2016
Filed:
Mar. 17, 2013
Applicant:
Fujitsu Limited, Kawasaki-shi, JP;
Inventor:
Toshihide Kikkawa, Machida, JP;
Assignee:
FUJITSU LIMITED, Kawasaki, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/70 (2006.01); H01L 29/06 (2006.01); H01L 21/76 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/778 (2006.01); H01L 21/28 (2006.01); H01L 21/762 (2006.01); H01L 21/02 (2006.01); H01L 29/20 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0649 (2013.01); H01L 21/28264 (2013.01); H01L 21/76 (2013.01); H01L 21/76229 (2013.01); H01L 29/4236 (2013.01); H01L 29/66462 (2013.01); H01L 29/7787 (2013.01); H01L 21/02178 (2013.01); H01L 21/02318 (2013.01); H01L 29/2003 (2013.01); H01L 29/517 (2013.01); H01L 29/518 (2013.01);
Abstract
An AlGaN/GaN HEMT includes a compound semiconductor stack structure; an element isolation structure which demarcates an element region on the compound semiconductor stack structure; a first insulating film which is formed on the element region and is not formed on the element isolation structure; a second insulating film which is formed on at least the element isolation structure and is higher in hydrogen content than the first insulating film; and a gate electrode which is formed on the element region of the compound semiconductor stack structure via the second insulating film.