The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2016
Filed:
Jul. 29, 2015
Applicant:
Fujitsu Limited, Kawasaki-shi, Kanagawa, JP;
Inventors:
Assignee:
FUJITSU LIMITED, Kawasaki, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/338 (2006.01); H01L 21/336 (2006.01); H01L 21/322 (2006.01); H01L 21/285 (2006.01); H01L 29/778 (2006.01); H01L 29/66 (2006.01); H02M 3/335 (2006.01); H01L 29/417 (2006.01); H01L 21/28 (2006.01); H01L 21/768 (2006.01); H01L 29/40 (2006.01); H01L 29/423 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28581 (2013.01); H01L 21/28264 (2013.01); H01L 21/28537 (2013.01); H01L 21/76879 (2013.01); H01L 29/2003 (2013.01); H01L 29/402 (2013.01); H01L 29/4175 (2013.01); H01L 29/42372 (2013.01); H01L 29/66431 (2013.01); H01L 29/66462 (2013.01); H01L 29/778 (2013.01); H01L 29/7787 (2013.01); H02M 3/335 (2013.01); H02M 3/33592 (2013.01); Y02B 70/1475 (2013.01);
Abstract
A compound semiconductor device includes: a compound semiconductor layer; a protective insulating film that covers a top of the compound semiconductor layer; and a gate electrode formed on the protective insulating film, wherein the protective insulating film has a first trench and a second trench which is formed side by side with the first trench and in which the protective insulating film remains with only a predetermined thickness on the compound semiconductor layer, and wherein the gate electrode fills the first trench, and one end of the gate electrode is away from the first trench and located at least in the second trench.