The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 28, 2017
Filed:
Jun. 09, 2015
Fujitsu Limited, Kawasaki-shi, Kanagawa, JP;
Shirou Ozaki, Kawasaki, JP;
Masahito Kanamura, Kawasaki, JP;
Norikazu Nakamura, Kawasaki, JP;
Toyoo Miyajima, Kawasaki, JP;
Masayuki Takeda, Kawasaki, JP;
Keiji Watanabe, Kawasaki, JP;
Toshihide Kikkawa, Kawasaki, JP;
Kenji Imanishi, Kawasaki, JP;
Toshihiro Ohki, Kawasaki, JP;
Tadahiro Imada, Kawasaki, JP;
FUJITSU LIMITED, Kawasaki, JP;
Abstract
A semiconductor device includes a first semiconductor layer formed over a substrate, a second semiconductor layer formed over the first semiconductor layer, a source electrode and a drain electrode formed over the second semiconductor layer, an insulating film formed over the second semiconductor layer, a gate electrode formed over the insulating film, and a protection film covering the insulating film, the protection film being formed by thermal CVD, thermal ALD, or vacuum vapor deposition.