Kawasaki, Japan

Kenji Imanishi

This inventor holds 33 USPTO granted patents and 5 published patent applications and 2 EPO patents, primarily in Compound Semiconductor Devices. Top assignees: Fujitsu Corporation, Hitachi Cable Co., Ltd.. Active years: 1997-2017.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kenji Imanishi. Retrieved from https://idiyas.com/inventor/kenji-imanishi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 33 

% Patents Active = 90.9


Average Co-Inventor Count = 2.1

ph-index = 7

Forward Citations = 171(Granted Patents)


Location History:

  • Atsugi, JP (2014 - 2016)
  • Kawasaki, JP (1997 - 2017)

Company Filing History:


Years Active: 1997-2017

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Areas of Expertise:
Compound Semiconductor
Manufacturing Method
Field-Effect Transistor
Doherty Amplifier
SiC Substrate
Semiconductor Device
AIN Layer
Controlled Skewness
Current-Driven Device
Integrated Circuit
Reduced Resistance
Schottky Electrode
33 patents (USPTO):Explore Patents

Title: Kenji Imanishi: A Pioneer in Semiconductor Innovations

Introduction

Kenji Imanishi, a prominent inventor based in Kawasaki, Japan, has made significant contributions to the field of semiconductors with a remarkable portfolio of 33 patents. His work has spurred advancements in semiconductor device technology, enhancing performance and efficiency across various applications.

Latest Patents

Among Imanishi's latest patents is a sophisticated semiconductor device designed to optimize electrical performance. This device features multiple layers, including a first semiconductor layer overlying a substrate, followed by a second semiconductor layer. It also includes source and drain electrodes, an insulating film, and a gate electrode, all protected by a specialized film formed through advanced techniques such as thermal chemical vapor deposition or atomic layer deposition.

Another noteworthy patent focuses on the method of manufacturing compound semiconductor devices. This innovative process involves forming an initial layer, followed by a buffer layer, and then constructing an electron transport layer in conjunction with an electron supply layer. The method highlights the precise control of flow rate ratios for V-group and III-group element source gases, allowing for the creation of complex compound semiconductor films with enhanced characteristics, including an Fe-doped region to improve performance.

Career Highlights

Imanishi's illustrious career includes significant tenures at major corporations, such as Fujitsu Corporation and Hitachi Cable Co., Ltd. His work at these organizations has left a lasting impact on semiconductor technology, as he consistently pushes the boundaries of what is possible in the field.

Collaborations

Throughout his career, Kenji Imanishi has collaborated with esteemed colleagues such as Toshihide Kikkawa and Toyoo Miyajima. These collaborations have fostered an environment of innovation and creativity, leading to breakthroughs that have propelled the semiconductor industry forward.

Conclusion

Kenji Imanishi stands out as a key figure in semiconductor innovation, with a rich history of patents and collaborations. His contributions continue to influence the development of advanced technologies in various sectors, ensuring that his legacy will endure in the ever-evolving world of electronics.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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