The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2013
Filed:
Sep. 20, 2011
Kenji Imanishi, Kawasaki, JP;
Toshihide Kikkawa, Kawasaki, JP;
Takeshi Tanaka, Tokai, JP;
Yoshihiko Moriya, Hitachi, JP;
Yohei Otoki, Hitachi, JP;
Kenji Imanishi, Kawasaki, JP;
Toshihide Kikkawa, Kawasaki, JP;
Takeshi Tanaka, Tokai, JP;
Yoshihiko Moriya, Hitachi, JP;
Yohei Otoki, Hitachi, JP;
Fujitsu Limited, Kawasaki, JP;
Hitachi Cable Co., Ltd., Tokyo, JP;
Abstract
A semiconductor epitaxial substrate includes: a single crystal substrate; an AlN layer epitaxially grown on the single crystal substrate; and a nitride semiconductor layer epitaxially grown on the AlN layer, wherein an interface between the AlN layer and nitride semiconductor layer has a larger roughness than an interface between the single crystal substrate and AlN layer, and a skewness of the upper surface of the AlN layer is positive.