The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2014
Filed:
May. 23, 2013
Fujitsu Limited, Kawasaki, JP;
Norikazu Nakamura, Sagamihara, JP;
Shirou Ozaki, Yamato, JP;
Masayuki Takeda, Atsugi, JP;
Toyoo Miyajima, Isehara, JP;
Toshihiro Ohki, Hadano, JP;
Masahito Kanamura, Isehara, JP;
Kenji Imanishi, Atsugi, JP;
Toshihide Kikkawa, Machida, JP;
Keiji Watanabe, Atsugi, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A semiconductor device may include a first semiconductor layer formed on a substrate, a second semiconductor layer formed on the first semiconductor layer, a source electrode and a drain electrode in contact with the first semiconductor layer or the second semiconductor layer, an opening formed in the second semiconductor layer, an insulating film formed on an inner surface of the opening formed in the second semiconductor layer and above the second semiconductor layer, a gate electrode formed in the opening via the insulating film, and a protective film formed on the insulating film and including an amorphous film containing carbon as a major component.