The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2014
Filed:
Nov. 11, 2011
Applicants:
Masahito Kanamura, Kawasaki, JP;
Toshihide Kikkawa, Kawasaki, JP;
Kenji Imanishi, Kawasaki, JP;
Inventors:
Assignee:
Fujitsu Limited, Kawasaki, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/338 (2006.01); H01L 29/51 (2006.01); H01L 29/778 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7787 (2013.01); H01L 29/41766 (2013.01); H01L 29/513 (2013.01); H01L 29/66462 (2013.01); H01L 29/472376 (2013.01);
Abstract
A compound semiconductor device includes: a compound semiconductor layer; a first film formed over the compound semiconductor layer, the first film being in a negatively charged state or a non-charged state at an interface with the compound semiconductor layer; a second film formed over the first film, the second film being in a positively charged state at an interface with the first film; and a gate electrode to be embedded in an opening formed in the second film.