The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2013
Filed:
Nov. 11, 2011
Toyoo Miyajima, Kawasaki, JP;
Toshihide Kikkawa, Kawasaki, JP;
Kenji Imanishi, Kawasaki, JP;
Toshihiro Ohki, Kawasaki, JP;
Masahito Kanamura, Kawasaki, JP;
Toyoo Miyajima, Kawasaki, JP;
Toshihide Kikkawa, Kawasaki, JP;
Kenji Imanishi, Kawasaki, JP;
Toshihiro Ohki, Kawasaki, JP;
Masahito Kanamura, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A compound semiconductor device includes: an electron transport layer formed over a substrate; an electron supply layer formed over the electron transport layer; and a cap layer formed over the electron supply layer; the cap layer includes a first compound semiconductor layer containing GaN; a second compound semiconductor layer containing AlN, which is formed over the first compound semiconductor layer; a third compound semiconductor layer containing GaN, which is formed over the second compound semiconductor layer; and at least one of a first AlGaN-containing layer and a second AlGaN-containing layer, with the first AlGaN-containing layer formed between the first compound semiconductor layer and the second compound semiconductor layer and the Al content increases toward the second compound semiconductor layer, and the second AlGaN-containing layer formed between the second compound semiconductor layer and the third compound semiconductor layer and the Al content increases toward the second compound semiconductor layer.