The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2015
Filed:
Sep. 23, 2013
Transphorm Japan, Inc., Yokohama, Kanagawa, JP;
Shinichi Akiyama, Yokohama, JP;
Kenji Nukui, Yokohama, JP;
Mutsumi Katou, Yokohama, JP;
Yoshitaka Watanabe, Yokohama, JP;
Tetsuya Itou, Yokohama, JP;
Yoichi Fujisawa, Yokohama, JP;
Toshiya Sato, Yokohama, JP;
Tsutomu Hosoda, Yokohama, JP;
Yuuichi Satou, Yokohama, JP;
Transphorm Japan, Inc., Yokohama, JP;
Abstract
A compound semiconductor device includes a substrate; a compound semiconductor layer formed on the substrate; a first insulating film formed on the compound semiconductor layer; a second insulating film formed on the first insulating film; and a gate electrode, a source electrode, and a drain electrode, each being formed on the compound semiconductor layer, wherein the gate electrode is formed of a first opening filled with a first conductive material via at least a gate insulator, and the first opening is formed in the first insulating film and configured to partially expose the compound semiconductor layer, and wherein the source electrode and the drain electrode are formed of a pair of second openings filled with at least a second conductive material, and the second openings are formed in at least the second insulating film and the first insulating film and configured to partially expose the compound semiconductor layer.