The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 21, 2023
Filed:
Mar. 02, 2021
Fujitsu Limited, Kawasaki, JP;
Atsushi Yamada, Hiratsuka, JP;
FUJITSU LIMITED, Kawasaki, JP;
Abstract
A semiconductor device includes: a base of a first nitride semiconductor; a buffer layer of a second nitride semiconductor provided on or above the base; a channel layer of a third nitride semiconductor provided on or above the buffer layer and having an opening portion; a barrier layer of a fourth nitride semiconductor provided on or above the channel layer; and an electrically conductive contact layer of a fifth nitride semiconductor provided in the opening portion and in contact with the buffer layer and the channel layer. A ratio of Al in a composition of the second nitride semiconductor is higher than or equal to that of the third nitride semiconductor. A ratio of Al in a composition of the first nitride semiconductor and a ratio of Al in a composition of the fourth nitride semiconductor are higher than that of the second nitride semiconductor.