logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10008591 B1

PDFFull Text
Date of Patent:
Jun. 26, 2018

Filed:

Aug. 23, 2017

Semiconductor device, fabrication method for semiconductor device, power supply apparatus and high-frequency amplifier

Applicant:

Fujitsu Limited, Kawasaki-shi, Kanagawa, JP;

Inventors:

Masato Nishimori, Atsugi, JP;

Tatsuya Hirose, Yokohama, JP;

Atsushi Yamada, Isehara, JP;

Assignee:

FUJITSU LIMITED, Kawasaki, JP;

Attorney:

Fujitsu Patent Center

Primary Examiner:

Tan N Tran

Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 29/778 (2006.01); H01L 29/10 (2006.01); H01L 29/06 (2006.01); H01L 29/417 (2006.01); H01L 21/764 (2006.01); H01L 29/66 (2006.01); H01L 21/324 (2006.01); H01L 23/31 (2006.01); H01L 29/20 (2006.01); H01L 29/207 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7787 (2013.01); H01L 21/3245 (2013.01); H01L 21/764 (2013.01); H01L 29/0649 (2013.01); H01L 29/0657 (2013.01); H01L 29/1075 (2013.01); H01L 29/41766 (2013.01); H01L 29/66462 (2013.01); H01L 29/7786 (2013.01); H01L 23/3171 (2013.01); H01L 29/2003 (2013.01); H01L 29/207 (2013.01); H01L 29/41758 (2013.01); H01L 2224/0603 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/48257 (2013.01); H01L 2224/4903 (2013.01);
Abstract

A semiconductor device is configured including a p-type back barrier layer provided over a substrate and formed from a p-type nitride semiconductor in which Mg or Zn is doped, a nitride semiconductor stacked structure provided over the p-type back barrier layer, the nitride semiconductor stacked structure including an electron transit layer and an electron supply layer, a source electrode, a drain electrode and a gate electrode provided over the nitride semiconductor stacked structure, and a groove extending to the p-type back barrier layer.

Find Patent Forward Citations

Nishimori, Masato. (2018). Semiconductor device, fabrication method for semiconductor device, power supply apparatus and high-frequency amplifier (U.S. Patent No. 10008591). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10008591

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…