The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 26, 2018
Filed:
Aug. 23, 2017
Applicant:
Fujitsu Limited, Kawasaki-shi, Kanagawa, JP;
Inventors:
Assignee:
FUJITSU LIMITED, Kawasaki, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 29/778 (2006.01); H01L 29/10 (2006.01); H01L 29/06 (2006.01); H01L 29/417 (2006.01); H01L 21/764 (2006.01); H01L 29/66 (2006.01); H01L 21/324 (2006.01); H01L 23/31 (2006.01); H01L 29/20 (2006.01); H01L 29/207 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7787 (2013.01); H01L 21/3245 (2013.01); H01L 21/764 (2013.01); H01L 29/0649 (2013.01); H01L 29/0657 (2013.01); H01L 29/1075 (2013.01); H01L 29/41766 (2013.01); H01L 29/66462 (2013.01); H01L 29/7786 (2013.01); H01L 23/3171 (2013.01); H01L 29/2003 (2013.01); H01L 29/207 (2013.01); H01L 29/41758 (2013.01); H01L 2224/0603 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/48257 (2013.01); H01L 2224/4903 (2013.01);
Abstract
A semiconductor device is configured including a p-type back barrier layer provided over a substrate and formed from a p-type nitride semiconductor in which Mg or Zn is doped, a nitride semiconductor stacked structure provided over the p-type back barrier layer, the nitride semiconductor stacked structure including an electron transit layer and an electron supply layer, a source electrode, a drain electrode and a gate electrode provided over the nitride semiconductor stacked structure, and a groove extending to the p-type back barrier layer.