The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 19, 2025
Filed:
Sep. 02, 2022
Applicant:
Fujitsu Limited, Kawasaki, JP;
Inventor:
Atsushi Yamada, Hiratsuka, JP;
Assignee:
Fujitsu Limited, Kawasaki, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/47 (2025.01); H10D 62/85 (2025.01);
U.S. Cl.
CPC ...
H10D 30/475 (2025.01); H10D 62/8503 (2025.01);
Abstract
A semiconductor device includes a channel layer, a barrier layer disposed above the channel layer, a protective layer disposed on the barrier layer, and an insulating layer disposed on the protective layer. A composition of the barrier layer is represented by InAlGaN, where 0.00<=x1<=0.20, and 0.10<=x2<=1.00, and a composition of the protective layer is represented by InAlGaN, where 0.00<=y1<=0.20, and 0.10<=y2<=1.00, x2<y2. The protective layer is an amorphous layer.