Fujitsu Corporation

Transphorm Japan, Inc.

Fujitsu Microelectronics Limited

Atsushi Yamada

Tetsuro Ishiguro

Norikazu Nakamura

Junji Kotani

Kozo Makiyama

Kenji Imanishi

Masato Nishimori

Sanae Shimizu

Tadahiro Imada

Toyoo Miyajima

Kenji Nukui

Junya Yaita

Shirou Ozaki

Naoya Okamoto

Tatsuya Hirose

Takashi Mimura

Hidefumi Nishi

Toshio Kudo

A semiconductor device includes: a channel layer that includes a first nitride semiconductor that contains Ga; a barrier layer that is provided on a first surface side of the channel layer, and includes a second nitride semiconductor that contains In, Al, and Ga; a source electrode and a drain electrode that are provided on a second surface side of the barrier layer opposite to the channel layer side; a gate electrode that is provided between the source electrode and the drain electrode, on the second surface side of the barrier layer; and an insulating layer that is provided between the second surface of the barrier layer and the gate electrode.

Semiconductor device, method for manufacturing semiconductor device, and electronic device

A semiconductor device includes a channel layer, a barrier layer disposed above the channel layer, a protective layer disposed on the barrier layer, and an insulating layer disposed on the protective layer. A composition of the barrier layer is represented by InAlGaN, where 0.00<=x1<=0.20, and 0.10<=x2<=1.00, and a composition of the protective layer is represented by InAlGaN, where 0.00<=y1<=0.20, and 0.10<=y2<=1.00, x2<y2. The protective layer is an amorphous layer.

Semiconductor device

A semiconductor device includes a substrate, an insulating layer provided over the substrate, a collection of metal particles exposed on the surface of the insulating layer, and a diamond layer provided on the surface of the insulating layer on which the metal particles are exposed. By controlling the surface density and particle size of the metal particles on the surface of the insulating layer, the surface density of diamond nuclei that are formed on the surface is controlled. Diamond grains are formed by crystal growth using the diamond nuclei as starting material, thereby forming a diamond layer. The control of the surface density of the diamond nuclei results in forming, by the crystal growth, the diamond grains with a grain size exhibiting a relatively high thermal conductivity in the crystal growth initial layer of the diamond layer and improving the thermal conductivity between the diamond layer and the substrate.

Semiconductor device, method of manufacturing semiconductor device, and electronic device

A semiconductor device includes: a base of a first nitride semiconductor; a buffer layer of a second nitride semiconductor provided on or above the base; a channel layer of a third nitride semiconductor provided on or above the buffer layer and having an opening portion; a barrier layer of a fourth nitride semiconductor provided on or above the channel layer; and an electrically conductive contact layer of a fifth nitride semiconductor provided in the opening portion and in contact with the buffer layer and the channel layer. A ratio of Al in a composition of the second nitride semiconductor is higher than or equal to that of the third nitride semiconductor. A ratio of Al in a composition of the first nitride semiconductor and a ratio of Al in a composition of the fourth nitride semiconductor are higher than that of the second nitride semiconductor.

A semiconductor device includes an underlayer made of a first nitride semiconductor, a first buffer layer made of a second nitride semiconductor, provided on the underlayer, and subjected to compressive stress from the underlayer in an in-plane direction which is perpendicular to a thickness direction of the underlayer, a second buffer layer made of a third nitride semiconductor, provided on the first buffer layer, and subjected to compressive stress from the first buffer layer in the in-plane direction, a channel layer made of a fourth nitride semiconductor, provided on the second buffer layer, and subjected to compressive stress from the second buffer layer in the in-plane direction, and a barrier layer made of a fifth nitride semiconductor, and provided above the channel layer.

A disclosed semiconductor device includes an electron transit layer; an electron supply layer disposed above the electron transit layer; a source electrode, a drain electrode, and a gate electrode, the source electrode, the drain electrode, and the gate electrode being disposed on the electron supply layer; a first capping layer disposed on the electron supply layer between the gate electrode and the drain electrode; and a negative charge generation layer disposed on the first capping layer, the negative charge generation layer being configured to generate a negative charge.

A compound semiconductor device includes a first compound semiconductor layer containing a p-type impurity, a second compound semiconductor layer disposed over the first compound semiconductor layer and containing InGaN, an electron transit layer disposed over the second compound semiconductor layer, and an electron supply layer disposed over the electron transit layer.

Compound semiconductor device with high power and reduced off-leakage and method for manufacturing the same

A semiconductor device includes a substrate, a channel layer containing GaN formed above the substrate, a barrier layer containing InAlGaN (0.00&#x2264;x1&#x2264;0.20, 0.60&#x2264;y1&#x2264;1.00) formed above the channel layer, an intermediate layer containing InAlGaN (0.00&#x2264;x2&#x2264;0.04, 0.30&#x2264;y2&#x2264;0.60) formed on the barrier layer, and a cap layer containing GaN formed on the intermediate layer.

Semiconductor device and semiconductor device manufacturing method

A semiconductor device includes a substrate; a first barrier layer containing AlN, over the substrate; a channel layer containing BGaN, over the first barrier layer; and a second barrier layer containing AlN, over the channel layer. A difference between a first lattice constant of the channel layer and a second lattice constant of the first barrier layer is less than or equal to 1.55% of the second lattice constant.

Semiconductor device and method of manufacturing the same

A disclosed compound semiconductor device includes a channel layer configured to generate carriers;

Compound semiconductor device and fabrication method

A semiconductor crystal substrate includes a first buffer layer formed of a nitride semiconductor over a substrate, a second buffer layer formed of a nitride semiconductor on the first buffer layer, a first semiconductor layer formed of a nitride semiconductor on or over the second buffer layer, and a second semiconductor layer formed of a nitride semiconductor on the first semiconductor layer. The Fe concentration of the first buffer layer is higher than the C concentration of the first buffer layer. The C concentration of the second buffer layer is higher than the Fe concentration of the second buffer layer.

Semiconductor crystal substrate with Fe doping

A compound semiconductor device includes: a first layer of nitride semiconductor, the first layer being doped with Fe; a channel layer of nitride semiconductor above the first layer; and a barrier layer of nitride semiconductor above the channel layer, wherein the channel layer includes: a two-dimensional electron gas region in which the two-dimensional electron gas exists; and an Al-containing region between the two-dimensional electron gas region and the first layer, an Al concentration in the Al-containing region being 5&#xd7;10atoms/cmor more and less than 1&#xd7;10atoms/cm.

Compound semiconductor device and method of manufacturing the same

A compound semiconductor substrate includes a substrate, a channel layer provided over the substrate, a nitride semiconductor layer provided over the channel layer, and a barrier layer provided on the nitride semiconductor layer. The length of the c axis of the nitride semiconductor layer is 0.4990 nm or more.

Compound semiconductor substrate and fabrication method therefor, compound semiconductor device and fabrication method therefor, power supply apparatus and high-output amplifier

A semiconductor device includes a substrate, a first semiconductor layer formed over the substrate, a second semiconductor layer formed over the first semiconductor layer, a third semiconductor layer formed over the second semiconductor layer, and a gate electrode, a source electrode, and a drain electrode that are formed over the third semiconductor layer. The first semiconductor layer includes a first nitride semiconductor. The second semiconductor includes a second nitride semiconductor. The third semiconductor layer includes a third nitride semiconductor. The concentration of oxygen included in the second semiconductor layer is less than 5.0&#xd7;10cm. The concentration of oxygen included in the third semiconductor layer is greater than or equal to 5.0&#xd7;10cm.

Semiconductor device and method for manufacturing the semiconductor device

A semiconductor device is configured including a p-type back barrier layer provided over a substrate and formed from a p-type nitride semiconductor in which Mg or Zn is doped, a nitride semiconductor stacked structure provided over the p-type back barrier layer, the nitride semiconductor stacked structure including an electron transit layer and an electron supply layer, a source electrode, a drain electrode and a gate electrode provided over the nitride semiconductor stacked structure, and a groove extending to the p-type back barrier layer.

Growing community of inventors

Isehara, Japan

Atsushi Yamada