The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 2025
Filed:
Mar. 01, 2024
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10F 77/122 (2025.01); H10F 30/221 (2025.01); H10F 30/223 (2025.01); H10F 71/00 (2025.01); H10F 77/50 (2025.01);
U.S. Cl.
CPC ...
H10F 77/122 (2025.01); H10F 30/221 (2025.01); H10F 30/223 (2025.01); H10F 71/1212 (2025.01); H10F 71/129 (2025.01); H10F 77/50 (2025.01);
Abstract
Various embodiments of the present disclosure are directed towards an optoelectronic device. The device includes a substrate, and a germanium photodiode region extending into an upper surface of the substrate. The germanium photodiode region has a curved upper surface that extends past the upper surface of the substrate. A silicon cap overlies the curved upper surface of the germanium photodiode region. There is an absence of oxide between the curved upper surface of the germanium photodiode region and an upper surface of the silicon cap.