The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 27, 2021
Filed:
Sep. 17, 2018
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Po-Chun Liu, Hsinchu, TW;
Chung-Yi Yu, Hsin-Chu, TW;
Chi-Ming Chen, Zhubei, TW;
Chen-Hao Chiang, Jhongli, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
The present disclosure, in some embodiments, relates to a transistor device. The transistor device includes a layer of GaN over a substrate. A mobility-enhancing layer of AlGaN is over the layer of GaN and has a first molar fraction z in a first range of between approximately 0.25 and approximately 0.4. A resistance-reducing layer of AlGaN is over the mobility-enhancing layer and has a second molar fraction x in a second range of between approximately 0.1 and approximately 0.15. A source has a source contact and an underlying source region. A drain has a drain contact and an underlying drain region. The source and drain regions extend through the resistance-reducing layer of AlGaN and into the mobility-enhancing layer of AlGaN. The source and drain regions have bottoms over a bottom of the mobility-enhancing layer of AlGaN. A gate structure is laterally between the source and drain contacts.