The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 07, 2025

Filed:

Feb. 25, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Yu-Hung Cheng, Tainan, TW;

Ching I Li, Tainan, TW;

Chen-Hao Chiang, Jhongli, TW;

Eugene I-Chun Chen, Taipei, TW;

Chin-Chia Kuo, Tainan, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10F 39/12 (2025.01); H10F 39/00 (2025.01);
U.S. Cl.
CPC ...
H10F 39/199 (2025.01); H10F 39/026 (2025.01); H10F 39/802 (2025.01);
Abstract

The present disclosure relates to an integrated chip. The integrated chip includes a sensor semiconductor layer. The sensor semiconductor layer is doped with a first dopant. A photodetector is along a frontside of the sensor semiconductor layer. A backside semiconductor layer is along a backside of the sensor semiconductor layer, opposite the frontside. The backside semiconductor layer is doped with a second dopant. A diffusion barrier structure is between the sensor semiconductor layer and the backside semiconductor layer. The diffusion barrier structure includes a third dopant different from the first dopant and the second dopant.


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