Yu-Hung Cheng

This inventor holds 79 USPTO granted patents and 7 published patent applications, primarily in Semiconductor Technology (CPC class H01L). Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., Taiwan Semiconductor Manufacturing Co., Ltd.. Active years: 2013-2026.

USPTO Granted Patents = 79 (Patent Applications = 7)

% Patents Active = 91.1

Average Co-Inventor Count = 5.0

ph-index = 8

Forward Citations = 249(Granted Patents)

Forward Citations (Not Self Cited) = 209(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Hsinchu, TW (2013 - 2021)
Tainan, TW (2015 - 2024)

Company Filing History:

78 out of 42,711

Taiwan Semiconductor Manufacturing Comp. Ltd.

patents

1 out of 450

Taiwan Semiconductor Manufacturing Co., Ltd.

patents

Years Active: 2013-2026

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Areas of Expertise:

Semiconductor-On-Insulator

Image Sensor

Polysilicon Isolation

Deep Trench Isolation

Epitaxial Semiconductor

High Voltage Devices

Thin SOI Substrates

Carrier-Trapping Layers

Wafer Fabrication

Photo-Sensitive Devices

Silicon Epitaxy

Isolation Structures

79 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12648226 - Trapping layer for a radio frequency die and methods of formation (2026-06-02),

2. 12557610 - Multilayer isolation structure for high voltage silicon-on-insulator device (2026-02-17),

3. 12557391 - Method for forming semiconductor-on-insulator (SOI) substrate and recycle substrate (2026-02-17),

4. 12484327 - Pre-cleaning for a deep trench isolation structure in a pixel sensor (2025-11-25),

5. 12456661 - Semiconductor structure having a silicon active layer formed over a SiGe etch stop layer and an insulating layer with a through silicon via (TSV) passed therethrough (2025-10-28),

6. 12439709 - Image sensor with diffusion barrier structure (2025-10-07),

7. 12426390 - Passivation for a vertical transfer gate in a pixel sensor (2025-09-23),

8. 12165911 - Method for forming a semiconductor-on-insulator (SOI) substrate (2024-12-10),

9. 12148756 - Selective polysilicon growth for deep trench polysilicon isolation structure (2024-11-19),

10. 12074186 - Isolation epitaxial bi-layer for backside deep trench isolation structure in an image sensor (2024-08-27),

11. 12074036 - Multi-layered polysilicon and oxygen-doped polysilicon design for RF SOI trap-rich poly layer (2024-08-27),

12. 12040221 - Fabrication method of metal-free SOI wafer (2024-07-16),

13. 12002813 - Method for forming semiconductor-on-insulator (SOI) substrate by cleaving a multilayer structure along voids to separate a substrate (2024-06-04),

14. 11869761 - Back-side deep trench isolation structure for image sensor (2024-01-09),

15. 11855159 - Method for forming thin semiconductor-on-insulator (SOI) substrates (2023-12-26),

Title: The Innovative Journey of Yu-Hung Cheng

Introduction: Yu-Hung Cheng, a talented inventor hailing from Tainan, Taiwan, has made significant contributions to the field of technology with his groundbreaking innovations.

Latest Patents: Cheng's latest patents focus on advancements in renewable energy technologies, particularly in the development of solar power systems that are more efficient and cost-effective.

Career Highlights: With a career spanning over two decades, Cheng has worked with leading research institutions and technology companies to bring his inventions to life. His expertise in electrical engineering and renewable energy has led to the successful implementation of several cutting-edge projects.

Collaborations: Cheng has collaborated with top universities and industry experts to further his research and bring his inventions to the market. His partnerships have been instrumental in pushing the boundaries of innovation in the renewable energy sector.

Conclusion: Yu-Hung Cheng's dedication to innovation and his passion for creating sustainable solutions have solidified his position as a respected inventor in the field of technology. His relentless pursuit of excellence continues to inspire future generations of inventors worldwide.