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Fremont, CA, United States of America

Koon Chong So

USPTO Granted Patents = 67

EPO Patents = 5 (Patent Applications = 3)

Average Co-Inventor Count = 2.6

ph-index = 21

Forward Citations = 1,693(Granted Patents)

Forward Citations (Not Self Cited) = 1,689(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Santa Clara, CA (US) (1997 - 1999)
San Jose, CA (US) (1998 - 2003)
Fremont, CA (US) (2001 - 2006)
Tempe, AZ (US) (2006 - 2014)

Company Filing History:

General Semiconductor, Inc.

Megamos Corporation

Icemos Technology Corporation

Magepower Semiconductor Corp.

Magemos Corporation

Third Dimension (3d) Semiconductor, Inc.

Mageposer Semiconductor Corporation

Years Active: 1997-2014

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Areas of Expertise:

Semiconductor Devices

Trench MOSFET

Trench DMOS

Schottky Rectifier

High Speed DMOS

Gate Oxide Integrity

On-Resistance Improvement

Electro-Static Discharge Protection

Cell Density Enhancement

Double Gate Structure

Optical Edge Effects

Source Contact Structure

67 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 8736019 - Semiconductor devices with sealed, unlined trenches and methods of forming same (2014-05-27),

2. 8716829 - Semiconductor devices with sealed, unlined trenches and methods of forming same (2014-05-06),

3. 8129252 - Semiconductor devices with sealed, unlined trenches and methods of forming same (2012-03-06),

4. 7944018 - Semiconductor devices with sealed, unlined trenches and methods of forming same (2011-05-17),

5. 7364994 - Method for manufacturing a superjunction device with wide mesas (2008-04-29),

6. 7094640 - Method of making a trench MOSFET device with improved on-resistance (2006-08-22),

7. 7052982 - Method for manufacturing a superjunction device with wide mesas (2006-05-30),

8. 7049194 - Trench DMOS device with improved drain contact (2006-05-23),

9. 7015125 - Trench MOSFET device with polycrystalline silicon source contact structure (2006-03-21),

10. 6979621 - Trench MOSFET having low gate charge (2005-12-27),

11. 6977203 - Method of forming narrow trenches in semiconductor substrates (2005-12-20),

12. 6884683 - Trench DMOS transistor having a zener diode for protection from electro-static discharge (2005-04-26),

13. 6849899 - High speed trench DMOS (2005-02-01),

14. 6822288 - Trench MOSFET device with polycrystalline silicon source contact structure (2004-11-23),

15. 6781196 - Trench DMOS transistor having improved trench structure (2004-08-24),

Title: The Innovative Journey of Inventor Koon Chong So

Introduction: Koon Chong So, a talented inventor based in Fremont, CA, has made significant contributions to the field of technology with his groundbreaking innovations.

Latest Patents: Koon Chong So holds several patents in the areas of electronics and software development, showcasing his expertise in creating cutting-edge solutions for modern challenges.

Career Highlights: Throughout his career, Koon Chong So has demonstrated a keen ability to identify gaps in the market and develop unique inventions to address them. His innovative spirit has led to the creation of products that have revolutionized the industry.

Collaborations: Koon Chong So has collaborated with various tech companies and research institutions to further enhance his inventions and bring them to the market. His partnerships have been instrumental in the success of his projects.

Conclusion: In conclusion, Koon Chong So stands as a visionary inventor who continues to push the boundaries of technology with his creative solutions. His passion for innovation and dedication to his craft make him a true pioneer in the field.

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