The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 01, 2005
Filed:
Sep. 29, 2003
Applicants:
Fwu-iuan Hshieh, Saratoga, CA (US);
Koon Chong SO, Fremont, CA (US);
Inventors:
Fwu-Iuan Hshieh, Saratoga, CA (US);
Koon Chong So, Fremont, CA (US);
Assignee:
General Semiconductor, Inc., Melville, NY (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2976 ;
U.S. Cl.
CPC ...
Abstract
A method for making trench DMOS is provided that utilizes polycide and refractory techniques to make trench DMOS which exhibit low gate resistance, low gate capacitance, reduced distributed RC gate propagation delay, and improved switching speeds for high frequency applications.