The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 20, 2005
Filed:
Nov. 20, 2001
Fwu-iuan Hshieh, Saratoga, CA (US);
Koon Chong SO, Fremont, CA (US);
John E. Amato, Tracy, CA (US);
Brian D. Pratt, Tracy, CA (US);
Fwu-Iuan Hshieh, Saratoga, CA (US);
Koon Chong So, Fremont, CA (US);
John E. Amato, Tracy, CA (US);
Brian D. Pratt, Tracy, CA (US);
General Semiconductor, Inc., Melville, NY (US);
Abstract
A method of forming a trench within a semiconductor substrate. The method comprises, for example, the following: (a) providing a semiconductor substrate; (b) providing a patterned first CVD-deposited masking material layer having a first aperture over the semiconductor substrate; (c) depositing a second CVD-deposited masking material layer over the first masking material layer; (d) etching the second masking material layer until a second aperture that is narrower than the first aperture is created in the second masking material within the first aperture; and (e) etching the semiconductor substrate through the second aperture such that a trench is formed in the semiconductor substrate. In preferred embodiments, the method of the present invention is used in the formation of trench MOSFET devices.