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Belfast, United Kingdom

Icemos Technology Corporation

USPTO Granted Patents = 53

% Expired Patents = 18.9

Trademarks = 1

Forward Citations = 169

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13 inventors (with patents filed for the assignee):

Hugh J Griffin (27 out of 28 patents)

Robin Wilson (24 out of 24 patents)

Conor Brogan (22 out of 22 patents)

4. Cormac MacNamara (22 out of 23 patents)

5. Samuel Anderson (20 out of 60 patents)

6. Takeshi Ishiguro (20 out of 29 patents)

7. Kiraneswar Muthuseenu (5 out of 5 patents)

8. Kenji Sugiura (5 out of 100 patents)

9. Aymeric Privat (5 out of 5 patents)

10. Koon Chong So (4 out of 67 patents)

11. Cathal Duffy (4 out of 4 patents)

12. Xu Cheng (2 out of 18 patents)

13. Hiugh J Griffin (1 out of 1 patent)

Core Competencies:

Radiation Hardened MOSFET

Superjunction Devices

Biosensor Semiconductor

Graphene Power MOSFETs

Trench Type Semiconductor

Photodetector Array

Thin Substrate Processing

Wafer Bonding Techniques

PIN Diode

Dielectric Termination

Through-Wafer Vias

Isolation Diffusions

53 patents: Sort by Forward Citations

1. 12727450 - Semiconductor device and method of forming sacrificial heteroepitaxy interface to provide substantially defect-free silicon carbide substrate (2026-09-01),

2. 12635200 - High-breakdown voltage, low Relectrical component with dissimilar semiconductor layers (2026-05-19),

3. 12598782 - Super-junction MOSFET/IGBT with MEMS layer transfer and WBG drain (2026-04-07),

4. 12527043 - Semiconductor device and method of forming charge balanced power MOSFET combining field plate and super-junction (2026-01-13),

5. 12506006 - Semiconductor device and method of direct wafer bonding between semiconductor layer containing similar WBG materials (2025-12-23),

6. 12230674 - Radiation hardened high voltage superjunction MOSFET (2025-02-18),

7. 12222316 - Semiconductor device providing a biosensor to test for pathogen (2025-02-11),

8. 11935839 - Semiconductor device with oxide-nitride stack (2024-03-19),

9. 11757001 - Radiation hardened high voltage superjunction MOSFET (2023-09-12),

10. 11545565 - Semiconductor device and method of forming low voltage power MOSFETs using graphene for metal layers and graphene nanoribbons for channel and drain enhancement regions of power vertical and lateral MOSFETs (2023-01-03),

11. 11362179 - Radiation hardened high voltage superjunction MOSFET (2022-06-14),

12. 11362042 - Semiconductor device with oxide-nitride stack (2022-06-14),

13. 9576842 - Grass removal in patterned cavity etching (2017-02-21),

14. 9461109 - Method of forming superjunction high voltage devices using wafer bonding (2016-10-04),

15. 9147751 - Methods of manufacturing superjunction devices (2015-09-29),

IceMos Technology Corporation is a leading provider of semiconductor solutions for wireless communication devices. With its cutting-edge technology and extensive experience in the industry, IceMos Technology Corporation offers a wide range of integrated circuits and modules for various applications, including mobile phones, tablets, and IoT devices. The company is committed to delivering innovative and reliable solutions to meet the growing demands of the connected world.

This text is generated by artificial intelligence and may not be accurate.

Company Badge

USPTO Data Jan 1 1976 - Sep 15 2026

Icemos Technology Corporation

53 Patents

#3 in Belfast

#333 in United Kingdom

#13,293 in the World

Belfast, United Kingdom

Icemos Technology Corporation

Forward Citations = 169

13 inventors:

Hugh J Griffin (27 out of 28 patents)

Robin Wilson (24 out of 24 patents)

Conor Brogan (22 out of 22 patents)

4. Cormac MacNamara (22 out of 23 patents)

5. Samuel Anderson (20 out of 60 patents)

Please report any incorrect information to [email protected]

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