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Belfast, United Kingdom

Icemos Technology Corporation

USPTO Granted Patents = 53

% Expired Patents = 18.9

Trademarks = 1

Forward Citations = 169

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13 inventors (with patents filed for the assignee):

Hugh J Griffin (27 out of 28 patents)

Robin Wilson (24 out of 24 patents)

Conor Brogan (22 out of 22 patents)

4. Cormac MacNamara (22 out of 23 patents)

5. Samuel Anderson (20 out of 60 patents)

6. Takeshi Ishiguro (20 out of 29 patents)

7. Kiraneswar Muthuseenu (5 out of 5 patents)

8. Kenji Sugiura (5 out of 100 patents)

9. Aymeric Privat (5 out of 5 patents)

10. Koon Chong So (4 out of 67 patents)

11. Cathal Duffy (4 out of 4 patents)

12. Xu Cheng (2 out of 18 patents)

13. Hiugh J Griffin (1 out of 1 patent)

Core Competencies:

Superjunction MOSFET

Wafer Bonding

Biosensor

Radiation Hardened

Graphene

Photodetector Array

Thin Substrate Processing

Oxide-Nitride Stack

High Voltage Device

Trench Type Device

Thermally Sensitive Material

PIN Diode

53 patents: Sort by Forward Citations

1. 12727450 - Semiconductor device and method of forming sacrificial heteroepitaxy interface to provide substantially defect-free silicon carbide substrate (2026-09-01),

2. 12635200 - High-breakdown voltage, low Relectrical component with dissimilar semiconductor layers (2026-05-19),

3. 12598782 - Super-junction MOSFET/IGBT with MEMS layer transfer and WBG drain (2026-04-07),

4. 12527043 - Semiconductor device and method of forming charge balanced power MOSFET combining field plate and super-junction (2026-01-13),

5. 12506006 - Semiconductor device and method of direct wafer bonding between semiconductor layer containing similar WBG materials (2025-12-23),

6. 12230674 - Radiation hardened high voltage superjunction MOSFET (2025-02-18),

7. 12222316 - Semiconductor device providing a biosensor to test for pathogen (2025-02-11),

8. 11935839 - Semiconductor device with oxide-nitride stack (2024-03-19),

9. 11757001 - Radiation hardened high voltage superjunction MOSFET (2023-09-12),

10. 11545565 - Semiconductor device and method of forming low voltage power MOSFETs using graphene for metal layers and graphene nanoribbons for channel and drain enhancement regions of power vertical and lateral MOSFETs (2023-01-03),

11. 11362179 - Radiation hardened high voltage superjunction MOSFET (2022-06-14),

12. 11362042 - Semiconductor device with oxide-nitride stack (2022-06-14),

13. 9576842 - Grass removal in patterned cavity etching (2017-02-21),

14. 9461109 - Method of forming superjunction high voltage devices using wafer bonding (2016-10-04),

15. 9147751 - Methods of manufacturing superjunction devices (2015-09-29),

Company Overview

Icemos Technology Corporation, based in Belfast, GB, specializes in the development and manufacturing of advanced semiconductor devices. The company focuses on innovative technologies such as superjunction MOSFETs, wafer bonding, and biosensors, catering to various high-tech applications. Icemos is also engaged in research related to radiation-hardened components, graphene materials, photodetector arrays, and thin substrate processing, positioning itself at the forefront of semiconductor advancements.

Profile summary synthesized from public USPTO records and patent filings.

Company Badge

USPTO Data Jan 1 1976 - Oct 6 2026

53 Patents

#3 in Belfast

#334 in United Kingdom

#13,323 in the World

Belfast, United Kingdom

Icemos Technology Corporation

Forward Citations = 169

13 inventors:

Hugh J Griffin (27 out of 28 patents)

Robin Wilson (24 out of 24 patents)

Conor Brogan (22 out of 22 patents)

4. Cormac MacNamara (22 out of 23 patents)

5. Samuel Anderson (20 out of 60 patents)

IDiyas Innovation Intelligence. (2026). Company Patent Portfolio: Icemos Technology Corporation. Retrieved from https://idiyas.com/company/icemos-technology

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

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