Tempe, AZ, United States of America

Samuel Anderson

USPTO Granted Patents = 55 

Average Co-Inventor Count = 2.0

ph-index = 10

Forward Citations = 326(Granted Patents)

Forward Citations (Not Self Cited) = 315(Oct 12, 2025)


Location History:

  • Swarthmore, PA (US) (1979 - 1980)
  • Walllingford, PA (US) (2015)
  • Charleston, SC (US) (2022)
  • Tempe, AZ (US) (1992 - 2024)
  • Wallingford, PA (US) (2013 - 2024)

Company Filing History:


Years Active: 1979-2025

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55 patents (USPTO):Explore Patents

Title: **Innovative Contributions of Samuel Anderson in Semiconductor Technology**

Introduction:

Samuel Anderson, based in Tempe, AZ, is a distinguished inventor with an impressive portfolio of 27 patents related to semiconductor technology. His work has significantly advanced the field, particularly in high-voltage and radiation-hardened devices, showcasing his expertise and dedication to innovation.

Latest Patents:

One of Samuel's notable inventions is the **Radiation Hardened High Voltage Superjunction MOSFET**. This advanced device consists of a semiconductor substrate and a semiconductor layer characterized by columns of first and second conductivity types. The design incorporates a buffer layer of the first conductivity situated between the semiconductor substrate and layer, along with a unique plug region that extends to the columns. This structure aids in creating an efficient source/drain region that maintains optimum performance under high-voltage conditions.

Another key patent of Samuel's is for a **Semiconductor Device with Oxide-Nitride Stack**. This device features a semiconductor layer with contrasting main surfaces and a first column that incorporates a first concentration dopant. A trench, partially extending through the semiconductor layer, allows for sophisticated control of conductivity through a carefully designed oxide and nitride layer, with an airtight seal ensuring durability and performance.

Career Highlights:

Throughout his career, Samuel Anderson has made remarkable contributions while working for prominent companies, including Icemos Technology Corporation and Great Wall Semiconductor Corporation. His role in these organizations has enabled him to develop cutting-edge technologies that enhance the efficiency and reliability of semiconductor devices.

Collaborations:

Samuel has collaborated with other talented professionals in the field, including David N. Okada and Takeshi Ishiguro. These collaborations have further enriched his work, allowing for a blend of ideas and expertise that drives innovation forward in the semiconductor industry.

Conclusion:

Samuel Anderson's innovative spirit and technical expertise have been instrumental in developing key technologies that shape the future of semiconductor devices. With 27 patents to his name, his contributions are expected to continue influencing various applications, ensuring that he remains a pivotal figure in the advancement of this critical field.

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