Icemos Technology Corporation

Motorola Corporation

Great Wall Semiconductor Corporation

Other

International Blind Company

Samuel Anderson

David N Okada

Douglas Dumitru

Takeshi Ishiguro

Patrick Shea

Guillermo L Romero

Kiraneswar Muthuseenu

Koon Chong So

John Baird

Martin A Kalfus

James M Anderson

Kenji Sugiura

Hugh J Griffin

Karl W Wyatt

Jang-Hun (James) Yeh

Austin Vincent Harton

John Bliss

Brent W Pinder

Daniel J Sullivan

William C Simpson

Dianne Jenkins

Gary Dashney

A high voltage superjunction MOSFET includes a semiconductor substrate and a semiconductor layer having columns of first and second conductivity. A buffer layer of the first conductivity is between the semiconductor substrate and semiconductor layer. A plug region of the second conductivity is formed at a semiconductor layer surface and extends to the columns. A source/drain region is formed at the semiconductor layer surface and is connected to the plug region. The source/drain region has a concentration of the first conductivity between about 1×10cmand 1.5×10cm. A body region of the second conductivity is between the source/drain region and the first column and is connected to the plug region. A gate trench is formed in the semiconductor layer surface and extends toward the first column and has a trench gate electrode disposed therein. A dielectric layer separates the trench gate electrode from the first column.

Radiation hardened high voltage superjunction MOSFET

An atomic level deposition for mass functionalization of a cavity filled with a pathogen sensitive antibody reagent to functionalize each biosensor using atomic level vapor phase deposition enables high volume production of this sensor technology. A biosensor has a first substrate and a second substrate with a cavity formed in the first substrate to form a membrane. Holes are formed through the second substrate. An aluminum oxide layer is formed over the cavity and into the holes to form cores. The cavity is filled with a pathogen sensitive antibody reagent. A biofluid sample with the pathogen is deposited over the membrane. The biofluid is drawn through the cores to mix with the antibody reagent. The antibodies combine with the pathogen to change the impedance along the current path. The presence of the pathogen changes the ionic current flow through the biosensor for a positive detection of the pathogen.

Semiconductor device providing a biosensor to test for pathogen

A device, method and system is directed to fast data storage on a block storage device. New data is linearly written to an empty write block. A location of the new data is tracked. Meta data associated with the new data is linearly written. A lookup table may be updated based in part on the meta data. The new data may be read based the lookup table configured to map a logical address to a physical address.

System, method and apparatus for accelerating fast block devices

A semiconductor device includes a semiconductor layer with opposing first and second main surfaces and a first column extending from the first main surface and having a first concentration of a dopant of the first conductivity type. A trench with a sidewall and bottom extends at least partially through the semiconductor layer from the first main surface. A second column between the trench sidewall and the first column has a second concentration of a dopant of a second conductivity type and is formed in the semiconductor layer and extends from the first main surface. A trench oxide layer is in contact with at least the trench sidewall and the trench bottom. A trench nitride layer covers the trench oxide layer at least on the trench sidewall. A dielectric seal material seals the trench proximate the first main surface of the semiconductor layer such that the trench is air-tight.

Semiconductor device with oxide-nitride stack

A high voltage superjunction MOSFET includes a semiconductor substrate and a semiconductor layer having columns of first and second conductivity. A buffer layer of the first conductivity is between the semiconductor substrate and semiconductor layer. A plug region of the second conductivity is formed at a semiconductor layer surface and extends to the columns. A source/drain region is formed at the semiconductor layer surface and is connected to the plug region. The source/drain region has a concentration of the first conductivity between about 1&#xd7;10cmand 1.5&#xd7;10cm. A body region of the second conductivity is between the source/drain region and the first column and is connected to the plug region. A gate trench is formed in the semiconductor layer surface and extends toward the first column and has a trench gate electrode disposed therein. A dielectric layer separates the trench gate electrode from the first column.

A semiconductor device has a substrate and graphene with semiconducting properties or diamond region formed on the substrate. The graphene with semiconducting properties or diamond region is formed on or within the substrate using liquid-phase-epitaxy growth of graphene enabled by a catalytic alloy of Ni and Cu. The substrate can be silicon, silicon carbide, gallium arsenide, gallium nitride, germanium, or indium phosphide. A semiconductor component is formed over the graphene with semiconducting properties or diamond region and substrate. The semiconductor component can be a power MOSFET, IGBT, or CTIGBT with a gate structure formed over the substrate, source region adjacent to the gate structure, and drain region adjacent to the gate structure opposite the source region. The graphene with semiconducting properties or diamond region is formed under a gate of the MOSFET to reduce drain to source resistance, as well as providing radiation hardening for the device.

Semiconductor device and method of forming low voltage power MOSFETs using graphene for metal layers and graphene nanoribbons for channel and drain enhancement regions of power vertical and lateral MOSFETs

A device, memory, method and system directed to fast data storage on a block storage device that reduces operational wear on the device. New data is written to an empty write block with a number of write blocks being reused. A location of the new data is tracked. Metadata associated with the new data is written. A lookup table may be updated based in part on the metadata. The new data may be read based the lookup table configured to map a logical address to a physical address.

Fast block device, system and methodology

A novel trailer securing and releasing mechanism for a boat is disclosed to facilitate the process when unloading and releasing a boat into the water as well as loading the boat back on the trailer via securing the boat's eye bolt, or ring. The invention device encompasses a spring- or hydraulically-activated mechanism normally attached to the trailer tongue. The boat loading mechanism operates by movement of a horizontal rod being forced in the direction toward the trailer resulting from contact by the boat ring. This contact and movement of the rod forward results in positioning the boat ring within an open claw-like device and, simultaneously, causes the open claw to slam shut wherein each claw arm lies with the boat ring and thereby affixing the boat to the trailer. As the rod arm is moved back within its housing by the forward motion of the boat the energy of said movement is captured and retained, either by a compression of a spring or of a fluid (gas or liquid) within a hydraulic mechanism. Subsequent disengagement of the boat ring from the claw-like device on the boat trailer results from release of the stored energy within the compressed spring (or fluid) to reverse the direction of movement of the horizontal rod that will result in the simultaneous opening of the claw mechanism and pushing of the rod head against the boat ring to release the boat from the trailer.

Trailer securing and releasing mechanism for a boat

A system, method and apparatus directed to fast data storage on a block storage device. New data is written to an empty write block. If the new data is compressible, a compressed version of the new is written into the meta data. A location of the new data is tracked. Meta data associated with the new data is written. A lookup table may be updated based in part on the meta data. The new data may be read based the lookup table configured to map a logical address to a physical address. Disk operations may use state data associated with the meta data to determine the empty write block. A write speed-limit may also be determined based on a lifetime period, a number of life cycles and a device-erase-sector-count for the device. A write speed for the device may be slowed based on the determined write speed-limit.

A semiconductor device includes a semiconductor substrate including a doped region. A metal layer is formed on the doped region. An insulating layer covers the metal layer. The metal layer can serve as a buried metal layer which reduces electrical resistance between electrical charge in the doped region and adjacent contacts. The contacts can extend through the insulating layer between the buried metal layer and overlying metal stripes.

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Tempe, AZ, United States of America

Samuel Anderson