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Tempe, AZ, United States of America

Great Wall Semiconductor Corporation

Calculating rank

USPTO Granted Patents = 26

% Expired Patents = 11.5

Forward Citations = 111

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5 inventors (with patents filed for the assignee):

Patrick Shea (16 out of 17 patents)

David N Okada (16 out of 16 patents)

Samuel Anderson (13 out of 60 patents)

4. Zheng John Shen (4 out of 12 patents)

5. Gary Dashney (1 out of 1 patent)

Core Competencies:

Trench MOSFET

Superjunction

Power MOSFET

Co-packaged Die

Low Voltage MOSFET

Schottky Diode

Integrated Devices

Radiation Hardened

26 patents: Sort by Forward Citations

1. 10832915 - Trench MOSFET with depleted gate shield and method of manufacture (2020-11-10),

2. 10825926 - Trench MOSFET with depleted gate shield and method of manufacture (2020-11-03),

3. 10741479 - Co-packaged die on leadframe with common contact (2020-08-11),

4. 10707327 - MOSFET with reduced resistance (2020-07-07),

5. 10529651 - Co-packaged die on leadframe with common contact (2020-01-07),

6. 10199459 - Superjunction with surrounding lightly doped drain region (2019-02-05),

7. 10164088 - Trench MOSFET with depleted gate shield and method of manufacture (2018-12-25),

8. 10163639 - Trench MOSFET with depleted gate shield and method of manufacture (2018-12-25),

9. 10153167 - Semiconductor devices with cavities (2018-12-11),

10. 9666703 - Semiconductor devices with cavities (2017-05-30),

11. 9640638 - Semiconductor device and method of forming a power MOSFET with interconnect structure to achieve lower RDSON (2017-05-02),

12. 9299774 - Device structure and methods of forming superjunction lateral power MOSFET with surrounding LDD (2016-03-29),

13. 9099519 - Semiconductor device and method of forming junction enhanced trench power MOSFET (2015-08-04),

14. 9018706 - Monolithic MOSFET and Schottky diode for mobile phone boost converter (2015-04-28),

15. 9006099 - Semiconductor device and method of forming a power MOSFET with interconnect structure silicide layer and low profile bump (2015-04-14),

Company Overview

Great Wall Semiconductor Corporation, based in Tempe, Arizona, specializes in the design and manufacturing of advanced semiconductor solutions. The company focuses on developing innovative technologies for various applications, including automotive, industrial, and consumer electronics. With a commitment to research and development, Great Wall Semiconductor aims to enhance performance and efficiency in electronic systems, contributing to the evolution of the semiconductor industry on a global scale.

Profile summary synthesized from public USPTO records and patent filings.

Company Badge

USPTO Data Jan 1 1976 - Oct 27 2026

26 Patents

#26 in Tempe, AZ

#162 in Arizona

#12,875 in US

#24,848 in the World

Tempe, AZ, United States of America

Great Wall Semiconductor Corporation

Forward Citations = 111

5 inventors:

Patrick Shea (16 out of 17 patents)

David N Okada (16 out of 16 patents)

Samuel Anderson (13 out of 60 patents)

4. Zheng John Shen (4 out of 12 patents)

5. Gary Dashney (1 out of 1 patent)

IDiyas Innovation Intelligence. (2026). Company Patent Portfolio: Great Wall Semiconductor Corporation. Retrieved from https://idiyas.com/company/great-wall-semiconductor

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

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