The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 30, 2017
Filed:
Dec. 11, 2015
Applicant:
Great Wall Semiconductor Corporation, Tempe, AZ (US);
Inventor:
Patrick M. Shea, Oviedo, FL (US);
Assignee:
GREAT WALL SEMICONDUCTOR CORPORATION, Tempe, AZ (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/739 (2006.01); H01L 29/06 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 23/544 (2006.01); H01L 29/78 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7395 (2013.01); H01L 21/02035 (2013.01); H01L 21/823418 (2013.01); H01L 21/823481 (2013.01); H01L 23/544 (2013.01); H01L 29/0634 (2013.01); H01L 29/0661 (2013.01); H01L 29/0696 (2013.01); H01L 29/66681 (2013.01); H01L 29/7396 (2013.01); H01L 29/7816 (2013.01); H01L 2223/54426 (2013.01); H01L 2223/54453 (2013.01); H01L 2924/0002 (2013.01);
Abstract
A semiconductor device comprises a first semiconductor wafer including a cavity formed in the first semiconductor die. A second semiconductor die is bonded to the first semiconductor die over the cavity. A first transistor includes a portion of the first transistor formed over the cavity.