Patrick Shea

This inventor holds 17 USPTO granted patents, primarily in Power MOSFET Technology. Top assignees: Great Wall Semiconductor Corporation, Renesas Electronics America Inc.. Active years: 2012-2021.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Patrick Shea. Retrieved from https://idiyas.com/inventor/patrick-shea

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

USPTO Granted Patents = 17

% Patents Active = 100.0

Average Co-Inventor Count = 1.5

ph-index = 3

Forward Citations = 31(Granted Patents)

Company Filing History:

16 out of 26

Great Wall Semiconductor Corporation

patents

1 out of 287

Renesas Electronics America Inc.

patents

Years Active: 2012-2021

Loading Chart...

Areas of Expertise:

Trench MOSFET

Superjunction

Integrated Schottky

Depleted Gate Shield

Co-Packaged Die

Low Voltage MOSFET

High Voltage SOI

Interconnect Structure

Lightly Doped Drain

Cavities

Power MOSFET

RDSON

17 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 11004839 - Trench power MOSFET with integrated-schottky in non-active area (2021-05-11),

2. 10832915 - Trench MOSFET with depleted gate shield and method of manufacture (2020-11-10),

3. 10825926 - Trench MOSFET with depleted gate shield and method of manufacture (2020-11-03),

4. 10741479 - Co-packaged die on leadframe with common contact (2020-08-11),

5. 10707327 - MOSFET with reduced resistance (2020-07-07),

6. 10529651 - Co-packaged die on leadframe with common contact (2020-01-07),

7. 10199459 - Superjunction with surrounding lightly doped drain region (2019-02-05),

8. 10164088 - Trench MOSFET with depleted gate shield and method of manufacture (2018-12-25),

9. 10163639 - Trench MOSFET with depleted gate shield and method of manufacture (2018-12-25),

10. 10153167 - Semiconductor devices with cavities (2018-12-11),

11. 9666703 - Semiconductor devices with cavities (2017-05-30),

12. 9640638 - Semiconductor device and method of forming a power MOSFET with interconnect structure to achieve lower RDSON (2017-05-02),

13. 9299774 - Device structure and methods of forming superjunction lateral power MOSFET with surrounding LDD (2016-03-29),

14. 9099519 - Semiconductor device and method of forming junction enhanced trench power MOSFET (2015-08-04),

15. 8962425 - Semiconductor device and method of forming junction enhanced trench power MOSFET having gate structure embedded within trench (2015-02-24),

Title: The Innovative Contributions of Patrick Shea

Introduction

Patrick Shea is a prominent inventor based in Oviedo, Florida, known for his significant contributions to the field of semiconductor technology. With a total of 17 patents to his name, Shea has made remarkable advancements that enhance the efficiency and performance of electronic devices.

Latest Patents

Among his latest patents is the "Trench power MOSFET with integrated-schottky in non-active area." This invention relates to an apparatus and method of integrating a semiconductor cell in a non-active area of a MOSFET on a semiconductor substrate. The active area of the MOSFET includes a regular MOSFET cell, while the semiconductor cell is configured to function as a trench MOS barrier Schottky (TMBS) diode. This integrated TMBS diode can limit body diode conduction and improve conduction and switching efficiency in circuits. Additionally, it enhances the softness of reverse recovery of the MOSFET, reducing drain to source voltage overshoot and ringing without wasting any active area of the semiconductor die.

Another notable patent is the "Trench MOSFET with depleted gate shield and method of manufacture." This semiconductor device includes at least one trench in a semiconductor substrate, featuring a polysilicon depleted gate shield. The device is designed to improve the overall performance of semiconductor applications.

Career Highlights

Patrick Shea has worked with several reputable companies throughout his career, including Great Wall Semiconductor Corporation and Renesas Electronics America Inc. His experience in these organizations has contributed to his expertise in semiconductor technology and innovation.

Collaborations

Shea has collaborated with notable professionals in the field, including David N. Okada and Samuel Anderson. These collaborations have further enriched his work and led to advancements in semiconductor design and manufacturing.

Conclusion

Patrick Shea's innovative contributions to semiconductor technology have significantly impacted the industry. His patents reflect a commitment to enhancing electronic device performance and efficiency.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]