The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 11, 2021
Filed:
Aug. 12, 2019
Renesas Electronics America Inc., Milpitas, CA (US);
Shengling Deng, Chandler, AZ (US);
Patrick Shea, Oviedo, FL (US);
Renesas Electronics America Inc., Milpitas, CA (US);
Abstract
The present embodiments relate to an apparatus and method of integrating a semiconductor cell in a non-active area of a MOSFET on a semiconductor substrate. An active area of the MOSFET may include a regular MOSFET cell. The semiconductor cell which can have various structures is configured to function as trench MOS barrier Schottky (TMBS) diode. Depending on its structure the TMBS diode may be integrated in a termination region or a shield tie region or a gate finger neighboring region in the non-active area. The integrated TMBS diode as such can limit the body diode conduction and improve the conduction and switching efficiency in a circuit. Additionally, an integrated TMBS diode may improve the softness of reverse recovery of the MOSFET, reduce drain to source voltage overshoot and ringing due to softer recovery and/or shield bounce without wasting any active area of the semiconductor die of the MOSFET.