The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2015
Filed:
May. 23, 2012
Zheng John Shen, Oviedo, FL (US);
Patrick M. Shea, Oviedo, FL (US);
David N. Okada, Chandler, AZ (US);
Zheng John Shen, Oviedo, FL (US);
Patrick M. Shea, Oviedo, FL (US);
David N. Okada, Chandler, AZ (US);
Great Wall Semiconductor Corporation, Tempe, AZ (US);
Abstract
A semiconductor device has a substrate and trench formed partially through the substrate. A drain region is formed in the substrate as a second surface of the substrate. An epitaxial region is formed in the substrate over the drain region. A vertical drift region is formed along a sidewall of the trench. An insulating material is deposited within the trench. A channel region is formed along the sidewall of the trench above the insulating material. The channel region is separated from the insulating material. A gate structure is formed within the trench adjacent to the channel region. The gate structure includes an insulating layer formed along the sidewall of the trench adjacent to the channel region and polysilicon layer formed within the trench over the insulating layer. A source region is formed in a first surface of the substrate contacting the channel region.