The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 28, 2015

Filed:

Apr. 24, 2014
Applicant:

Great Wall Semiconductor Corporation, Tempe, AZ (US);

Inventors:

Samuel J. Anderson, Tempe, AZ (US);

David N. Okada, Chandler, AZ (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 27/06 (2006.01); H01L 27/02 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/782 (2013.01); H01L 27/0629 (2013.01); H01L 29/0692 (2013.01); H01L 29/7835 (2013.01); H01L 27/0255 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A cell phone has a plurality of interconnected electronic components for performing the electrical functions of the phone. A DC/DC converter provides an operating voltage which is applied to power supply terminals of the plurality of interconnected electronic components. The DC/DC converter uses a monolithic semiconductor device containing a power metal oxide semiconductor field effect transistor (MOSFET) and Schottky diode. The semiconductor device has the lateral diffused MOSFET formed on a surface of the semiconductor device. The MOSFET is formed with a plurality conduction fingers. The Schottky diode is also formed on the surface of the semiconductor device and integrated between the plurality of conduction fingers of the MOSFET. The drain of the MOSFET is connected to the anode of the diode on the surface of the monolithic semiconductor device.


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