The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2017
Filed:
Dec. 10, 2013
Icemos Technology Ltd., Belfast, GB;
Hugh J. Griffin, Newtownabbey, GB;
Icemos Technology, Ltd., Belfast, GB;
Abstract
A method of manufacturing a semiconductor device includes providing a first semiconductor substrate having a first main surface and an opposing second main surface, and forming a pattern into the first semiconductor substrate. The pattern includes a plurality of trenches defining a plurality of mesas. Each of the plurality of mesas has sidewalls and a free surface formed by material of the first semiconductor substrate. The method further includes forming a cavity in the first semiconductor substrate such that the pattern is recessed in the cavity, forming an oxide layer in the cavity and on the sidewalls and free surfaces of the plurality of mesas, and etching the oxide layer to remove the oxide layer from the free surfaces of the plurality of mesas and at least a portion of the sidewalls of the plurality of mesas.