Yan Man Tsui

Title: Innovations by Yan Man Tsui in Trench MOSFET Technology

Introduction

Yan Man Tsui, located in Union City, CA, is a prominent inventor with an impressive portfolio of 29 patents to his name. His innovative work primarily revolves around trench MOSFET technology, which has significant implications in modern electronics and semiconductor design.

Latest Patents

Among his latest patents, Yan's invention titled "Method of making a trench MOSFET device with improved on-resistance" focuses on creating a trench MOSFET device by depositing an epitaxial layer over a substrate of the first conductivity type. This method enhances on-resistance by strategically forming a body region of the second conductivity type and utilizing a unique doping process to ensure optimal performance. Another notable patent, "Trench MOSFET device with polycrystalline silicon source contact structure," elaborates on a trench structure that incorporates various conductivity types and innovative contact formations within the device, thereby pushing the boundaries of existing technologies.

Career Highlights

Yan has had a notable career with significant positions in companies such as General Semiconductor, Inc. and Megamos Corporation. His expertise in semiconductor design and fabrication has made him a valuable asset in these organizations, contributing to transformative innovations in the field.

Collaborations

Throughout his career, Yan has collaborated with talented individuals, including Koon Chong So and Fwu-Iuan Hshieh. These professional partnerships have fueled the advancement of semiconductor technologies and the development of innovative solutions in the industry.

Conclusion

Through his numerous patents and collaborations, Yan Man Tsui has established himself as a leading inventor in trench MOSFET technology. His contributions continue to influence the semiconductor industry, paving the way for future innovations and advancements in electronic devices.