The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2003
Filed:
Nov. 20, 2001
Applicant:
Inventors:
Fwu-Iuan Hshieh, Saratoga, CA (US);
Koon Chong So, Fremont, CA (US);
Yan Man Tsui, Union City, CA (US);
Assignee:
General Semiconductor, Inc., Melville, NY (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1336 ;
U.S. Cl.
CPC ...
H01L 2/1336 ;
Abstract
A method for making trench DMOS is provided that improves the breakdown voltage of the oxide layer in a device having at least a first trench disposed in the active region of the device and a second trench disposed in the termination region of the device. In accordance with the method, mask techniques are used to thicken the oxide layer in the vicinity of the top corner of the second trench, thereby compensating for the thinning of this region (and the accompanying reduction in breakdown voltage) that occurs due to the two-dimensional oxidation during the manufacturing process.