Richard A Blanchard

Los Altos, CA, United States of America

Richard A Blanchard

Average Co-Inventor Count = 1.6

ph-index = 33

Forward Citations = 4,871(Granted Patents)

Forward Citations (Not Self Cited) = 4,493(Sep 21, 2024)

DiyaCoin DiyaCoin 21.03 

Inventors with similar research interests:



Years Active: 1982-2024

where 'Filed Patents' based on already Granted Patents

271 patents (USPTO):

Title: Richard A Blanchard: Innovating Power Semiconductor Devices

Introduction:

Richard A Blanchard is a prolific inventor and expert in the field of power semiconductor devices. With an impressive portfolio of 264 patents, he has made significant contributions to the development of cutting-edge technologies. Based in Los Altos, California, Blanchard has worked with renowned companies such as General Semiconductor, Inc. and Siliconix Incorporated. Let's delve into his latest patents, career highlights, and collaborations to gain a deeper understanding of his remarkable achievements.

Latest Patents:

Blanchard's most recent patents showcase his expertise in power device innovation. One of his groundbreaking inventions is the "Anti-parallel diode formed using damaged crystal structure in a vertical power device." This patent introduces a method of intentionally damaging the crystalline structure of a power device to enhance its functionality when conducting reverse voltages, such as voltage spikes from inductive loads. By selectively etching damaged areas, cathodes are formed for the anti-parallel diode, resulting in improved device performance.

Another noteworthy invention is the "Ruggedized symmetrically bidirectional bipolar power transistor" patent. This patent presents power semiconductor devices with breakdown initiation regions strategically located inside the emitter/collector regions, but laterally spaced away from insulated trenches. By separating trench portions and introducing dopants, the breakdown regions can be efficiently defined. These innovations contribute to the development of robust symmetrically-bidirectional power devices, particularly within the "B-TRAN" type.

Career Highlights:

Throughout his career, Blanchard has made significant contributions to the field of power semiconductor devices. His expertise and innovative mindset have led to numerous advancements in device design and performance. With 264 patents to his name, his work has influenced the industry and paved the way for future advancements.

Collaborations:

Blanchard has had the opportunity to collaborate with esteemed colleagues throughout his career. Notable among them are William C Alexander and Jun Zeng. These collaborations have fostered a creative and stimulating environment, leading to breakthroughs in power device technologies. By working with other experts in the field, Blanchard has been able to leverage their collective knowledge and expertise, ultimately driving innovation forward.

Conclusion:

Richard A Blanchard's contributions to the field of power semiconductor devices are truly remarkable. With an extensive patent portfolio and a history of collaborating with industry experts, he has revolutionized the design and functionality of power devices. His latest patents demonstrate his commitment to advancing the field, and his career highlights exemplify a dedication to innovation. Blanchard's work will undoubtedly continue to shape the future of power semiconductor devices, making him a prominent figure in the industry.

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