For the Inventor, By the Inventor

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San Jose, CA, United States of America

Maxpower Semiconductor Inc.

USPTO Granted Patents = 89

Trademarks = 8

Forward Citations = 544

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13 inventors (with patents filed for the assignee):

Mohamed N Darwish (80 out of 123 patents)

Jun Zeng (60 out of 96 patents)

Richard A Blanchard (30 out of 271 patents)

4. Amit Paul (11 out of 25 patents)

5. Shih-Tzung Su (11 out of 11 patents)

6. Hamza Yilmaz (8 out of 259 patents)

7. Kui Pu (7 out of 7 patents)

8. Shigenari Okada (1 out of 4 patents)

9. Masaki Nagata (1 out of 13 patents)

10. Wenfang Du (1 out of 1 patent)

11. Peter Su (1 out of 1 patent)

12. Richard A Blachard (1 out of 1 patent)

13. Mohammed N Darwish (1 out of 1 patent)

Core Competencies:

Trench-Gated Devices

MOSFET Technology

Lateral Transistors

Vertical Power Transistors

Power Semiconductor Devices

Embedded Dielectric Layers

Low-Voltage-Drop Shunt

Power MOSFET

Schottky Structures

High Density Power Devices

Recessed Field Plate

Semiconductor on Insulator

89 patents: Sort by Forward Citations

1. 12284817 - Trench-gated heterostructure and double-heterostructure active devices (2025-04-21),

2. 12057482 - MOSFET with distributed doped P-shield zones under trenches (2024-08-06),

3. 11888047 - Lateral transistors and methods with low-voltage-drop shunt to body diode (2024-01-30),

4. 11316021 - High density power device with selectively shielded recessed field plate (2022-04-26),

5. 11289596 - Split gate power device and its method of fabrication (2022-03-29),

6. 10720511 - Trench transistors and methods with low-voltage-drop shunt to body diode (2020-07-21),

7. 10720510 - Lateral transistors and methods with low-voltage-drop shunt to body diode (2020-07-21),

8. 10593813 - Vertical rectifier with added intermediate region (2020-03-17),

9. 10529810 - Lateral semiconductor power devices (2020-01-07),

10. 10510863 - Power device having a polysilicon-filled trench with a tapered oxide thickness (2019-12-17),

11. 10396150 - Vertical power transistor die with etched beveled edges for increasing breakdown voltage (2019-08-27),

12. 10325980 - Power semiconductor devices, methods, and structures with embedded dielectric layers containing permanent charges (2019-06-18),

13. 10186573 - Lateral power MOSFET with non-horizontal RESURF structure (2019-01-22),

14. 10157983 - Vertical power MOS-gated device with high dopant concentration N-well below P-well and with floating P-islands (2018-12-18),

15. 10128353 - Trench transistors and methods with low-voltage-drop shunt to body diode (2018-11-13),

MaxPower Semiconductor Inc. is a leading global provider of high-performance semiconductor solutions for various industries. With our dedicated team of engineers and cutting-edge technologies, we offer a wide range of power management and control solutions that cater to the needs of our customers. Our products are known for their reliability, efficiency, and superior performance. At MaxPower Semiconductor, we strive to exceed customer expectations and drive innovation in the semiconductor industry.

This text is generated by artificial intelligence and may not be accurate.

Company Badge

USPTO Data Jan 1 1976 - Dec 23 2025

89 Patents

#114 in San Jose, CA

#966 in California

#4,044 in US

#8,340 in the World

San Jose, CA, United States of America

Maxpower Semiconductor Inc.

Forward Citations = 544

13 inventors:

Mohamed N Darwish (80 out of 123 patents)

Jun Zeng (60 out of 96 patents)

Richard A Blanchard (30 out of 271 patents)

4. Amit Paul (11 out of 25 patents)

5. Shih-Tzung Su (11 out of 11 patents)

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