Kui Pu

Title: Innovations of Kui Pu

Introduction

Kui Pu is a notable inventor based in Chengdu, China, recognized for his contributions to semiconductor technology. He holds a total of seven patents, showcasing his expertise and innovative spirit in the field.

Latest Patents

Among his latest patents is the "Split gate power device and its method of fabrication." This invention features a trench containing a U-shaped gate that, when biased above a threshold voltage, creates a conductive channel in a p-well. The design includes a field plate in the trench, coupled to the source electrode, which spreads the electric field along the trench to enhance the breakdown voltage. The thin top gate poly can be patterned using non-CMP techniques, allowing for fabrication in conventional fabs without CMP capability. Another significant patent is the "Vertical power MOS-gated device with high dopant concentration N-well below P-well and with floating P-islands." This invention includes an N-type drift region grown over the substrate, with a P-well formed over an N-type layer that has a higher dopant concentration. The design aims to reduce on-resistance and increase breakdown voltage through innovative structural features.

Career Highlights

Kui Pu is currently employed at Maxpower Semiconductor Inc., where he continues to develop cutting-edge technologies in power devices. His work has significantly impacted the semiconductor industry, particularly in enhancing the performance and efficiency of power devices.

Collaborations

He collaborates with talented coworkers, including Jun Zeng and Mohamed N Darwish, contributing to a dynamic and innovative work environment.

Conclusion

Kui Pu's inventive contributions and patents reflect his dedication to advancing semiconductor technology. His work continues to influence the industry and inspire future innovations.