The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 2022
Filed:
Aug. 12, 2020
Applicant:
Maxpower Semiconductor Inc., San Jose, CA (US);
Inventors:
Mohamed N. Darwish, Campbell, CA (US);
Jun Zeng, Torrance, CA (US);
Richard A. Blanchard, Los Altos, CA (US);
Assignee:
MaxPower Semiconductor Inc., San Jose, CA (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/40 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/739 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/407 (2013.01); H01L 29/0634 (2013.01); H01L 29/401 (2013.01); H01L 29/404 (2013.01); H01L 29/4236 (2013.01); H01L 29/66348 (2013.01); H01L 29/66734 (2013.01); H01L 29/7397 (2013.01); H01L 29/7813 (2013.01);
Abstract
A vertical transistor structure in which a recessed field plate trench surrounds multiple adjacent gate electrodes. Thus the specific on-state conductance is increased, since the ratio of recessed field plate area to channel area is reduced. Various versions use two, three, or more distinct gate electrodes within the interior of a single RFP or RSFP trench's layout.