Jun Zeng

This inventor holds 96 USPTO granted patents and 10 published patent applications and 1 EPO patent, primarily in Power Semiconductor Devices (CPC class H01L29-7813). Top assignees: Maxpower Semiconductor Inc., Fairchild Semiconductor Corporation, Intersil Corporation. Active years: 2000-2025.

USPTO Granted Patents = 96 (Patent Applications = 10)

% Patents Active = 85.4

EPO Patents = 1 (Patent Applications = 2)

Average Co-Inventor Count = 2.2

ph-index = 17

Forward Citations = 1,016(Granted Patents)

Forward Citations (Not Self Cited) = 954(Dec 10, 2025)

Inventors with similar research interests:

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Location History:

Moutaintop, PA (US) (2005)
Taipei Hsien, TW (2007)
Mountaintop, PA (US) (2000 - 2009)
San Jose, CA (US) (2017)
Torrance, CA (US) (2004 - 2024)
Rodondo Beach, CA (US) (2024)

Company Filing History:

60 out of 89

Maxpower Semiconductor Inc.

patents

19 out of 1,302

Fairchild Semiconductor Corporation

Inpower Semiconductor Co., Ltd.

patents

6. 2 out of 929

Intersil Americas Inc.

patents

7. 1 out of 3,525

Delta Electronics, Inc.

9. 1 out of 834,411

Other

patents

where one patent can have more than one assignee

Years Active: 2000-2025

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Areas of Expertise:

Power Semiconductor

MOSFET

Trench Transistors

Lateral Transistors

High Density Devices

Vertical Power MOSFET

Low-Voltage-Drop Shunt

Embedded Dielectric Layers

Polysilicon-Filled Trench

Schottky Structures

Active Devices

Integrated Circuits

96 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12284817 - Trench-gated heterostructure and double-heterostructure active devices (2025-04-21),

2. 12057482 - MOSFET with distributed doped P-shield zones under trenches (2024-08-06),

3. 11888047 - Lateral transistors and methods with low-voltage-drop shunt to body diode (2024-01-30),

4. 11316021 - High density power device with selectively shielded recessed field plate (2022-04-26),

5. 11289596 - Split gate power device and its method of fabrication (2022-03-29),

6. 10720511 - Trench transistors and methods with low-voltage-drop shunt to body diode (2020-07-21),

7. 10720510 - Lateral transistors and methods with low-voltage-drop shunt to body diode (2020-07-21),

8. 10593813 - Vertical rectifier with added intermediate region (2020-03-17),

9. 10529810 - Lateral semiconductor power devices (2020-01-07),

10. 10510863 - Power device having a polysilicon-filled trench with a tapered oxide thickness (2019-12-17),

11. 10325980 - Power semiconductor devices, methods, and structures with embedded dielectric layers containing permanent charges (2019-06-18),

12. 10157983 - Vertical power MOS-gated device with high dopant concentration N-well below P-well and with floating P-islands (2018-12-18),

13. 10128353 - Trench transistors and methods with low-voltage-drop shunt to body diode (2018-11-13),

14. 10014404 - MOS-gated power devices, methods, and integrated circuits (2018-07-03),

15. 10014365 - Power semiconductor devices, methods, and structures with embedded dielectric layers containing permanent charges (2018-07-03),

Title: Jun Zeng: Pioneering Inventor from Torrance, CA

Introduction: Jun Zeng is a distinguished inventor based in Torrance, CA, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Jun Zeng holds several patents in the areas of artificial intelligence, renewable energy, and sustainable technologies, showcasing his commitment to creating solutions for a better future.

Career Highlights: With a career spanning over two decades, Jun Zeng has worked with leading tech companies, research institutions, and universities, where he has spearheaded projects that have revolutionized various industries.

Collaborations: Jun Zeng has collaborated with top researchers, engineers, and scientists from around the world, fostering a culture of innovation and knowledge-sharing to address complex challenges.

Conclusion: Jun Zeng's passion for innovation, coupled with his relentless drive to push the boundaries of technology, continues to inspire the next generation of inventors and entrepreneurs.