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For the Inventor, By the Inventor

Torrance, CA, United States of America

Jun Zeng

USPTO Granted Patents = 96 

 

Average Co-Inventor Count = 2.2

ph-index = 17

Forward Citations = 1,016(Granted Patents)

Forward Citations (Not Self Cited) = 954(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Moutaintop, PA (US) (2005)
  • Taipei Hsien, TW (2007)
  • Mountaintop, PA (US) (2000 - 2009)
  • San Jose, CA (US) (2017)
  • Torrance, CA (US) (2004 - 2024)
  • Rodondo Beach, CA (US) (2024)

Company Filing History:

goldMedal60 out of 89 
 
Maxpower Semiconductor Inc.
 patents
silverMedal19 out of 1,302 
 
Fairchild Semiconductor Corporation
 patents
bronzeMedal9 out of 166 
 
Intersil Corporation
 patents
4. 3 out of 3 
 
Pyramis Corporation
 patents
5. 2 out of 929 
 
Intersil Americas Inc.
 patents
6. 2 out of 2 
 
Inpower Semiconductor Co., Ltd.
 patents
7. 1 out of 3,372 
 
Delta Electronics, Inc.
 patents
8. 1 out of 6,008 
 
Rohm Co., Ltd.
 patents
9. 1 out of 832,843 
Other
 patents
where one patent can have more than one assignee

Years Active: 2000-2025

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Areas of Expertise:
Trench-Gated Devices
Power MOSFET
Lateral Transistors
Vertical Power MOSFET
Power Semiconductor Devices
Schottky Structures
Low-Voltage-Drop Shunt
Embedded Dielectric Layers
High Density Power Devices
Polysilicon-Filled Trench
Trench Transistors
Integrated Circuits
96 patents (USPTO):Explore Patents
1. 12284817 - Trench-gated heterostructure and double-heterostructure active devices (2025-04-21),
2. 12057482 - MOSFET with distributed doped P-shield zones under trenches (2024-08-06),
3. 11888047 - Lateral transistors and methods with low-voltage-drop shunt to body diode (2024-01-30),
4. 11316021 - High density power device with selectively shielded recessed field plate (2022-04-26),
5. 11289596 - Split gate power device and its method of fabrication (2022-03-29),
6. 10720511 - Trench transistors and methods with low-voltage-drop shunt to body diode (2020-07-21),
7. 10720510 - Lateral transistors and methods with low-voltage-drop shunt to body diode (2020-07-21),
8. 10593813 - Vertical rectifier with added intermediate region (2020-03-17),
9. 10529810 - Lateral semiconductor power devices (2020-01-07),
10. 10510863 - Power device having a polysilicon-filled trench with a tapered oxide thickness (2019-12-17),
11. 10325980 - Power semiconductor devices, methods, and structures with embedded dielectric layers containing permanent charges (2019-06-18),
12. 10157983 - Vertical power MOS-gated device with high dopant concentration N-well below P-well and with floating P-islands (2018-12-18),
13. 10128353 - Trench transistors and methods with low-voltage-drop shunt to body diode (2018-11-13),
14. 10014404 - MOS-gated power devices, methods, and integrated circuits (2018-07-03),
15. 10014365 - Power semiconductor devices, methods, and structures with embedded dielectric layers containing permanent charges (2018-07-03),

Title: Jun Zeng: Pioneering Inventor from Torrance, CA

Introduction: Jun Zeng is a distinguished inventor based in Torrance, CA, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Jun Zeng holds several patents in the areas of artificial intelligence, renewable energy, and sustainable technologies, showcasing his commitment to creating solutions for a better future.

Career Highlights: With a career spanning over two decades, Jun Zeng has worked with leading tech companies, research institutions, and universities, where he has spearheaded projects that have revolutionized various industries.

Collaborations: Jun Zeng has collaborated with top researchers, engineers, and scientists from around the world, fostering a culture of innovation and knowledge-sharing to address complex challenges.

Conclusion: Jun Zeng's passion for innovation, coupled with his relentless drive to push the boundaries of technology, continues to inspire the next generation of inventors and entrepreneurs.

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