The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 2018
Filed:
Jan. 22, 2015
Applicant:
Maxpower Semiconductor, Inc., Santa Clara, CA (US);
Inventors:
Mohamed N. Darwish, Campbell, CA (US);
Jun Zeng, Torrance, CA (US);
Assignee:
MaxPower Semiconductor Inc., San Jose, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/40 (2006.01); H01L 29/49 (2006.01); H01L 29/08 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7802 (2013.01); H01L 29/0634 (2013.01); H01L 29/0649 (2013.01); H01L 29/0653 (2013.01); H01L 29/0696 (2013.01); H01L 29/1079 (2013.01); H01L 29/1095 (2013.01); H01L 29/402 (2013.01); H01L 29/407 (2013.01); H01L 29/408 (2013.01); H01L 29/4975 (2013.01); H01L 29/7811 (2013.01); H01L 29/7813 (2013.01); H01L 29/0661 (2013.01); H01L 29/0878 (2013.01); H01L 29/4236 (2013.01); H01L 29/42368 (2013.01); H01L 29/42376 (2013.01);
Abstract
MOS-gated devices, related methods, and systems for vertical power and RF devices including an insulated trench and a gate electrode. A body region is positioned so that a voltage bias on the gate electrode will cause an inversion layer in the body region. Permanent electrostatic charges are included in said insulation material. A conductive shield layer is positioned above the insulated trench, to reduce parasitic capacitances.