The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2025
Filed:
Jun. 11, 2018
Applicant:
Maxpower Semiconductor Inc., San Jose, CA (US);
Inventors:
Jun Zeng, Torrance, CA (US);
Mohamed N. Darwish, Campbell, CA (US);
Assignee:
MaxPower Semiconductor Inc., San Jose, CA (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/324 (2005.12); H01L 21/02 (2005.12); H01L 21/04 (2005.12); H01L 21/265 (2005.12); H01L 21/28 (2024.12); H01L 21/285 (2005.12); H10D 12/00 (2024.12); H10D 12/01 (2024.12); H10D 30/01 (2024.12); H10D 30/47 (2024.12); H10D 30/66 (2024.12); H10D 62/10 (2024.12); H10D 62/13 (2024.12); H10D 62/17 (2024.12); H10D 62/82 (2024.12); H10D 62/822 (2024.12); H10D 62/832 (2024.12); H10D 62/85 (2024.12); H10D 64/00 (2024.12); H10D 64/27 (2024.12);
U.S. Cl.
CPC ...
H10D 30/473 (2024.12); H01L 21/02164 (2012.12); H01L 21/049 (2012.12); H01L 21/28185 (2012.12); H01L 21/324 (2012.12); H10D 12/031 (2024.12); H10D 12/038 (2024.12); H10D 12/461 (2024.12); H10D 12/481 (2024.12); H10D 30/015 (2024.12); H10D 30/0291 (2024.12); H10D 30/0295 (2024.12); H10D 30/0297 (2024.12); H10D 30/4732 (2024.12); H10D 30/477 (2024.12); H10D 30/668 (2024.12); H10D 62/107 (2024.12); H10D 62/136 (2024.12); H10D 62/137 (2024.12); H10D 62/154 (2024.12); H10D 62/157 (2024.12); H10D 62/158 (2024.12); H10D 62/393 (2024.12); H10D 62/82 (2024.12); H10D 62/822 (2024.12); H10D 62/8325 (2024.12); H10D 62/8503 (2024.12); H10D 64/112 (2024.12); H10D 64/117 (2024.12); H10D 64/513 (2024.12); H01L 21/02274 (2012.12); H01L 21/047 (2012.12); H01L 21/26513 (2012.12); H01L 21/28035 (2012.12); H01L 21/28568 (2012.12);
Abstract
Heterostructure and double-heterostructure trench-gate devices, in which the substrate and/or the body are constructed of a narrower-bandgap semiconductor material than the uppermost portion of the drift region. Fabrication most preferably uses a process where gate dielectric anneal is performed after all other high-temperature steps have already been done.