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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10720511 B1

PDFFull Text
Date of Patent:
Jul. 21, 2020

Filed:

Oct. 01, 2018

Trench transistors and methods with low-voltage-drop shunt to body diode

Applicant:

Maxpower Semiconductor Inc., San Jose, CA (US);

Inventors:

Mohamed N. Darwish, Campbell, CA (US);

Jun Zeng, Torrance, CA (US);

Richard A. Blanchard, Los Altos, CA (US);

Assignee:

MaxPower Semiconductor Inc., San Jose, CA (US);

Attorneys:

Groover & Associates PLLC

Gwendolyn G. Corcoran

Robert O. Groover, III

Primary Examiner:

Bilkis Jahan

Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 27/088 (2006.01); H01L 29/417 (2006.01); H01L 29/40 (2006.01); H01L 29/78 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 21/265 (2006.01); H01L 21/8234 (2006.01); H01L 29/36 (2006.01); H01L 29/423 (2006.01); H01L 29/739 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66734 (2013.01); H01L 21/26506 (2013.01); H01L 21/823412 (2013.01); H01L 21/823437 (2013.01); H01L 21/823475 (2013.01); H01L 21/823487 (2013.01); H01L 27/088 (2013.01); H01L 29/0878 (2013.01); H01L 29/1033 (2013.01); H01L 29/1095 (2013.01); H01L 29/36 (2013.01); H01L 29/407 (2013.01); H01L 29/41741 (2013.01); H01L 29/41766 (2013.01); H01L 29/4236 (2013.01); H01L 29/66727 (2013.01); H01L 29/7395 (2013.01); H01L 29/7803 (2013.01); H01L 29/7813 (2013.01); H01L 29/7827 (2013.01); H01L 29/7831 (2013.01); H01L 29/7835 (2013.01); H01L 29/0847 (2013.01); H01L 29/42368 (2013.01); H01L 29/66666 (2013.01);
Abstract

Methods and systems for power semiconductor devices integrating multiple trench transistors on a single chip. Multiple power transistors (or active regions) are paralleled, but one transistor has a lower threshold voltage. This reduces the voltage drop when the transistor is forward-biased. In an alternative embodiment, the power device with lower threshold voltage is simply connected as a depletion diode, to thereby shunt the body diodes of the active transistors, without affecting turn-on and ON-state behavior.

Find Patent Forward Citations

Darwish, Mohamed. (2020). Trench transistors and methods with low-voltage-drop shunt to body diode (U.S. Patent No. 10720511). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10720511

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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