Wenfang Du

Title: The Innovations of Wenfang Du

Introduction

Wenfang Du is a notable inventor based in Chengdu, China. He has made significant contributions to the field of semiconductor technology, particularly in the development of power MOS-gated devices. His innovative approach has led to the creation of a unique patent that enhances the performance of power electronic devices.

Latest Patents

Wenfang Du holds a patent for a "Vertical power MOS-gated device with high dopant concentration N-well below P-well and with floating P-islands." This invention describes a power MOSFET or IGBT cell that includes an N-type drift region grown over the substrate. An N-type layer with a higher dopant concentration than the drift region is formed over it. A P-well is created over the N-type layer, and an N+ source/emitter region is established in the P-well. The design features a gate that extends vertically into a trench, which enhances conduction and reduces on-resistance. Additionally, a vertical shield field plate is included to increase breakdown voltage, while floating P-islands in the N-type drift region further improve performance.

Career Highlights

Wenfang Du is currently employed at Maxpower Semiconductor Inc., where he continues to innovate in the semiconductor industry. His work focuses on enhancing the efficiency and reliability of power devices, making significant strides in the field.

Collaborations

Wenfang has collaborated with notable colleagues such as Jun Zeng and Mohamed N Darwish. Their combined expertise contributes to the advancement of semiconductor technologies and the development of cutting-edge solutions.

Conclusion

Wenfang Du's contributions to the field of semiconductor technology through his innovative patent demonstrate his commitment to advancing power electronic devices. His work at Maxpower Semiconductor Inc. and collaborations with esteemed colleagues further highlight his impact on the industry.