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For the Inventor, By the Inventor

Shulin, Taiwan

Shih-Tzung Su

USPTO Granted Patents = 11

Average Co-Inventor Count = 3.8

ph-index = 4

Forward Citations = 64(Granted Patents)


Location History:

  • Taipei, TW (2022)
  • Shulin, TW (2011 - 2024)

Company Filing History:

goldMedal11 out of 89 
 
Maxpower Semiconductor Inc.
 patents

Years Active: 2011-2024

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11 patents (USPTO):
1. 12057482 - MOSFET with distributed doped P-shield zones under trenches (2024-08-06),
2. 11289596 - Split gate power device and its method of fabrication (2022-03-29),
3. 10157983 - Vertical power MOS-gated device with high dopant concentration N-well below P-well and with floating P-islands (2018-12-18),
4. 9947779 - Power MOSFET having lateral channel, vertical current path, and P-region under gate for increasing breakdown voltage (2018-04-17),
5. 9761702 - Power MOSFET having planar channel, vertical current path, and top drain electrode (2017-09-12),
6. 9461127 - Vertical power MOSFET having planar channel and its method of fabrication (2016-10-04),
7. 9184248 - Vertical power MOSFET having planar channel and its method of fabrication (2015-11-10),
8. 9093522 - Vertical power MOSFET with planar channel and vertical field plate (2015-07-28),
9. 8581341 - Power MOSFET with embedded recessed field plate and methods of fabrication (2013-11-12),
10. 8294235 - Edge termination with improved breakdown voltage (2012-10-23),
11. 7923804 - Edge termination with improved breakdown voltage (2011-04-12),

Title: Shih-Tzung Su: Innovator in Semiconductor Technology

Introduction

Shih-Tzung Su is a prominent inventor based in Shulin, Taiwan, known for his significant contributions to semiconductor technology. With a total of 11 patents to his name, he has made remarkable advancements in the field of power devices.

Latest Patents

One of his latest patents is for a MOSFET with distributed doped P-shield zones under trenches. This innovation involves forming a vertical trench MOSFET with deep P-shield regions below portions of each gate trench. These regions are effectively downward extensions of the P-body/well and are electrically coupled to the top source electrode. The design ensures that small portions of the gate trench do not create N-channels, thus preventing unwanted current conduction. The spacing of the P-shield regions is carefully selected to achieve the desired electric field spreading, protecting the gate oxide from punch-through without the need for field plate trenches in the active area.

Another notable patent is for a split gate power device and its method of fabrication. This device features a trench containing a U-shaped gate that, when biased above a threshold voltage, creates a conductive channel in a p-well. A field plate below the gate is coupled to the source electrode, enhancing the breakdown voltage by spreading the electric field along the trench. The innovative design allows for fabrication in conventional fabs that lack CMP capability, making it a versatile solution in the industry.

Career Highlights

Shih-Tzung Su is currently employed at Maxpower Semiconductor Inc., where he continues to push the boundaries of semiconductor technology. His work has been instrumental in developing efficient power devices that are crucial for modern electronic applications.

Collaborations

He collaborates with talented individuals such as Jun Zeng and Mohamed N Darwish, contributing to a dynamic and innovative work environment.

Conclusion

Shih-Tzung Su's contributions to semiconductor technology through his patents and work at Maxpower Semiconductor Inc. highlight his role as a leading inventor in the field. His innovations continue to shape the future of power devices and semiconductor applications.

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