The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2012
Filed:
Apr. 12, 2011
Applicants:
Jun Zeng, Torrance, CA (US);
Mohamed N. Darwish, Campbell, CA (US);
Shih-tzung Su, Shulin, TW;
Inventors:
Assignee:
MaxPower Semiconductor, Inc., Santa Clara, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/095 (2006.01); H01L 29/47 (2006.01); H01L 29/812 (2006.01); H01L 31/07 (2006.01); H01L 31/108 (2006.01);
U.S. Cl.
CPC ...
Abstract
A MOSFET switch which has a low surface electric field at an edge termination area, and also has increased breakdown voltage. The MOSFET switch has a new edge termination structure employing an N-P-N sandwich structure. The MOSFET switch also has a polysilicon field plate configuration operative to enhance any spreading of any depletion layer located at an edge of a main PN junction of the N-P-N sandwich structure.