The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2013
Filed:
Apr. 19, 2011
Applicants:
Mohamed N. Darwish, Campbell, CA (US);
Jun Zeng, Torrance, CA (US);
Shih-tzung Su, Shulin, TW;
Richard A. Blanchard, Los Altos, CA (US);
Inventors:
Mohamed N. Darwish, Campbell, CA (US);
Jun Zeng, Torrance, CA (US);
Shih-Tzung Su, Shulin, TW;
Richard A. Blanchard, Los Altos, CA (US);
Assignee:
MaxPower Semiconductor, Inc., Santa Clara, CA (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
Abstract
Semiconductor power devices, and related methods, wherein a recessed contact makes lateral ohmic contact to the source diffusion, but is insulated from the underlying recessed field plate (RFP). Such an insulated RFP is here referred to as an embedded recessed field plate (ERFP).