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For the Inventor, By the Inventor

Milpitas, CA, United States of America

Ixys Corporation


USPTO Granted Patents = 197

% Expired Patents = 10.7


Forward Citations = 1,740

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61 inventors (with patents filed for the assignee):

goldMedal Nathan Zommer (55 out of 59 patents)

silverMedal Kyoung Wook Seok (36 out of 47 patents)

bronzeMedal Sam Seiichiro Ochi (20 out of 30 patents)

4.  Kang Rim Choi (13 out of 16 patents)

5.  Vladimir Tsukanov (11 out of 12 patents)

6.  Thomas Spann (10 out of 17 patents)

7.  Subhas Chandra Bose Jayappa Veeramma (9 out of 9 patents)

8.  Ulrich Kelberlau (9 out of 10 patents)

9.  Leonid A Neyman (8 out of 12 patents)

10.  Anatoliy V Tsyrganovich (7 out of 11 patents)

11.  Elmar Wisotzki (6 out of 12 patents)

12.  Charles Coleman (5 out of 14 patents)

13.  Bret Ross Howe (4 out of 8 patents)

14.  Andreas Laschek-Enders (4 out of 7 patents)

15.  Joseph James Roosma (3 out of 3 patents)


Core Competencies:
IGBT Technology
Fast Recovery Diodes
AC-to-DC Converters
Power MOSFET
Voltage Regulation
Thermal Management
High-Voltage Devices
LED Drivers
Synchronous Rectification
Diode Recovery
Die Assembly
Electrically Isolated Packages

197 patents:

1. 10319669 - Packaged fast inverse diode component for PFC applications (2019-06-11),
2. 10304970 - Packaged overvoltage protection circuit for triggering thyristors (2019-05-28),
3. 10276472 - Heat transfer plate having small cavities for taking up a thermal transfer material (2019-04-30),
4. 10249716 - IGBT assembly having saturable inductor for soft landing a diode recovery current (2019-04-02),
5. 10219339 - Current correction techniques for accurate high current short channel driver (2019-02-26),
6. 10217847 - Power transistor with increased avalanche current and energy rating (2019-02-26),
7. 10193000 - Fast recovery inverse diode (2019-01-29),
8. 10153716 - Compensation for asymmetries in electrodynamics of BLDC type machines using hall sensors (2018-12-11),
9. 10090751 - Gate driver for switching converter having body diode power loss minimization (2018-10-02),
10. 10069485 - High-speed MOSFET and IGBT gate driver (2018-09-04),
11. 10062686 - Reverse bipolar junction transistor integrated circuit (2018-08-28),
12. 10062621 - Power semiconductor device module having mechanical corner press-fit anchors (2018-08-28),
13. 10050527 - Synchronous sensing of inductor current in a buck converter control circuit (2018-08-14),
14. 10038383 - Low forward voltage rectifier using capacitive current splitting (2018-07-31),
15. 10038088 - Power MOSFET having improved manufacturability, low on-resistance and high breakdown voltage (2018-07-31),
Ixys Corporation, headquartered in Milpitas, California, specializes in the development and manufacturing of power semiconductors. The company focuses on advanced technologies such as IGBT technology, fast recovery diodes, and power MOSFETs, catering to a wide range of applications including voltage regulation and thermal management. Ixys is recognized for its innovative solutions in high-voltage devices and LED drivers, contributing significantly to the efficiency and performance of electronic systems across various industries.
Profile summary based on public USPTO records.

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USPTO Data Jan 1 1976 - Oct 6 2026

Ixys Corporation
197 Patents

#21 in Milpitas, CA

#457 in California

#2,089 in US

#4,279 in the World

Milpitas, CA (US)
Milpitas, CA, United States of America

Ixys Corporation

Forward Citations = 1,740

61 inventors:

goldMedal Nathan Zommer (55 out of 59 patents)

silverMedal Kyoung Wook Seok (36 out of 47 patents)

bronzeMedal Sam Seiichiro Ochi (20 out of 30 patents)

4.  Kang Rim Choi (13 out of 16 patents)

5.  Vladimir Tsukanov (11 out of 12 patents)

Please report any incorrect information to [email protected]
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