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For the Inventor, By the Inventor

San Jose, CA, United States of America

Siliconix Incorporated


USPTO Granted Patents = 256

% Expired Patents = 1.6


Trademarks = 12

Forward Citations = 12,007

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128 inventors (with patents filed for the assignee):

goldMedal Richard Kent Williams (100 out of 319 patents)

silverMedal Mike F Chang (39 out of 50 patents)

bronzeMedal Richard A Blanchard (34 out of 271 patents)

4.  Mohamed N Darwish (33 out of 123 patents)

5.  Fwu-Iuan Hshieh (31 out of 142 patents)

6.  Hamza Yilmaz (26 out of 259 patents)

7.  King Owyang (22 out of 30 patents)

8.  Michael E Cornell (19 out of 57 patents)

9.  Jun W Chen (19 out of 19 patents)

10.  Adrian I Cogan (17 out of 50 patents)

11.  Kyle Terrill (15 out of 72 patents)

12.  Yueh-Se Ho (13 out of 102 patents)

13.  Kuo-In Chen (11 out of 32 patents)

14.  Dorman C Pitzer (11 out of 14 patents)

15.  Kam Hong Lui (10 out of 15 patents)


Core Competencies:
Trench MOSFET
Power Semiconductor
Semiconductor Packaging
Field-Plate Design
Drain-Drift Region
High Density
Low On-Resistance
Bidirectional MOSFET
Thermal Management
Integrated Circuit
Voltage Clamping
Oxide Layer

256 patents:

1. 12635176 - Termination structure (2026-05-19),
2. 12224232 - Semiconductor package having side wall plating (2025-02-11),
3. 12211704 - Semiconductor package having side wall plating (2025-01-28),
4. 10483356 - Power semiconductor device with optimized field-plate design (2019-11-19),
5. 7795675 - Termination for trench MIS device (2010-09-14),
6. 7704836 - Method of fabricating super trench MOSFET including buried source electrode (2010-04-27),
7. 7557409 - Super trench MOSFET including buried source electrode (2009-07-07),
8. 7435650 - Process for manufacturing trench MIS device having implanted drain-drift region and thick bottom oxide (2008-10-14),
9. 7416947 - Method of fabricating trench MIS device with thick oxide layer in bottom of trench (2008-08-26),
10. 7394150 - Semiconductor package including die interposed between cup-shaped lead frame and lead frame having mesas and valleys (2008-07-01),
11. 7326995 - Trench MIS device having implanted drain-drift region and thick bottom oxide (2008-02-05),
12. 7291884 - Trench MIS device having implanted drain-drift region and thick bottom oxide (2007-11-06),
13. 7268032 - Termination for trench MIS device having implanted drain-drift region (2007-09-11),
14. 7238551 - Method of fabricating semiconductor package including die interposed between cup-shaped lead frame having mesas and valleys (2007-07-03),
15. 7233043 - Triple-diffused trench MOSFET (2007-06-19),
Siliconix Incorporated, based in San Jose, CA, specializes in the development and manufacturing of advanced trench MOSFET technology. The company focuses on power semiconductors that enhance efficiency and performance in various applications. Their expertise includes semiconductor packaging, field-plate design, and innovations in drain-drift region architecture, which contribute to high-density, low on-resistance, and bidirectional MOSFET solutions. Siliconix plays a crucial role in powering modern electronic devices and systems across multiple industries.
Profile summary based on public USPTO records.

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USPTO Data Jan 1 1976 - Sep 29 2026

Siliconix Incorporated
256 Patents

#51 in San Jose, CA

#355 in California

#1,678 in US

#3,406 in the World

San Jose, CA (US)
San Jose, CA, United States of America

Siliconix Incorporated

Forward Citations = 12,007

128 inventors:

goldMedal Richard Kent Williams (100 out of 319 patents)

silverMedal Mike F Chang (39 out of 50 patents)

bronzeMedal Richard A Blanchard (34 out of 271 patents)

4.  Mohamed N Darwish (33 out of 123 patents)

5.  Fwu-Iuan Hshieh (31 out of 142 patents)

Please report any incorrect information to [email protected]
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