For the Inventor, By the Inventor

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San Jose, CA, United States of America

Siliconix Incorporated

USPTO Granted Patents = 255

EPO Patents = 13

Trademarks = 14

Forward Citations = 11,943

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127 inventors (with patents filed for the assignee):

Richard Kent Williams (98 out of 319 patents)

Mike F Chang (38 out of 50 patents)

Richard A Blanchard (34 out of 271 patents)

4. Mohamed N Darwish (33 out of 123 patents)

5. Fwu-Iuan Hshieh (31 out of 142 patents)

6. Hamza Yilmaz (26 out of 259 patents)

7. King Owyang (22 out of 30 patents)

8. Jun W Chen (19 out of 19 patents)

9. Michael E Cornell (18 out of 57 patents)

10. Adrian I Cogan (17 out of 50 patents)

11. Kyle Terrill (15 out of 72 patents)

12. Yueh-Se Ho (13 out of 102 patents)

13. Kuo-In Chen (11 out of 32 patents)

14. Dorman C Pitzer (11 out of 14 patents)

15. Kam Hong Lui (10 out of 15 patents)

Core Competencies:

Trench MOSFET

Power Semiconductor Device

Super Trench MOSFET

Trench MIS Device

Semiconductor Package

Triple-Diffused Trench MOSFET

Battery Disconnect Switch

Vertical DMOSFET

High Density MOSFET

Silicon-Germanium Layer

Field-Shaping Body Profile

Barrier Accumulation-Mode MOSFET

255 patents: Sort by Forward Citations

1. 12224232 - Semiconductor package having side wall plating (2025-02-11),

2. 12211704 - Semiconductor package having side wall plating (2025-01-28),

3. 10483356 - Power semiconductor device with optimized field-plate design (2019-11-19),

4. 7795675 - Termination for trench MIS device (2010-09-14),

5. 7704836 - Method of fabricating super trench MOSFET including buried source electrode (2010-04-27),

6. 7557409 - Super trench MOSFET including buried source electrode (2009-07-07),

7. 7435650 - Process for manufacturing trench MIS device having implanted drain-drift region and thick bottom oxide (2008-10-14),

8. 7416947 - Method of fabricating trench MIS device with thick oxide layer in bottom of trench (2008-08-26),

9. 7394150 - Semiconductor package including die interposed between cup-shaped lead frame and lead frame having mesas and valleys (2008-07-01),

10. 7326995 - Trench MIS device having implanted drain-drift region and thick bottom oxide (2008-02-05),

11. 7291884 - Trench MIS device having implanted drain-drift region and thick bottom oxide (2007-11-06),

12. 7268032 - Termination for trench MIS device having implanted drain-drift region (2007-09-11),

13. 7238551 - Method of fabricating semiconductor package including die interposed between cup-shaped lead frame having mesas and valleys (2007-07-03),

14. 7233043 - Triple-diffused trench MOSFET (2007-06-19),

15. 7186609 - Method of fabricating trench junction barrier rectifier (2007-03-06),

Siliconix Incorporated is a leading semiconductor manufacturer specializing in high-performance power management solutions. With a diverse portfolio of products, including power MOSFETs, DC-DC converters, and voltage regulators, Siliconix is committed to delivering innovative and reliable solutions for a variety of applications, from industrial and automotive to telecommunications and consumer electronics.

This text is generated by artificial intelligence and may not be accurate.

Company Badge

USPTO Data Jan 1 1976 - Dec 30 2025

255 Patents

#53 in San Jose, CA

#361 in California

#1,618 in US

#3,310 in the World

San Jose, CA, United States of America

Siliconix Incorporated

Forward Citations = 11,943

127 inventors:

Richard Kent Williams (98 out of 319 patents)

Mike F Chang (38 out of 50 patents)

Richard A Blanchard (34 out of 271 patents)

4. Mohamed N Darwish (33 out of 123 patents)

5. Fwu-Iuan Hshieh (31 out of 142 patents)

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