The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 19, 2026

Filed:

Jul. 25, 2022
Applicant:

Siliconix Incorporated, San Jose, CA (US);

Inventors:

Ayman Shibib, San Jose, CA (US);

Jun Hu, Belmont, CA (US);

Assignee:

Siliconix Incorporated, San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/66 (2025.01); H01L 21/28 (2025.01); H10D 30/01 (2025.01); H10D 62/10 (2025.01); H10D 64/00 (2025.01); H10D 64/23 (2025.01); H10D 64/27 (2025.01);
U.S. Cl.
CPC ...
H10D 30/665 (2025.01); H10D 30/0297 (2025.01); H10D 30/668 (2025.01); H10D 62/127 (2025.01); H10D 64/117 (2025.01); H10D 64/513 (2025.01); H10D 64/519 (2025.01); H01L 21/28035 (2013.01); H10D 64/256 (2025.01);
Abstract

A metal oxide semiconductor field effect transistor (MOSFET) device, and methods for manufacturing and using the same. In some implementations, the MOSFET device includes a plurality of gate structures which are parallel to each other and separated from each other, and a termination structure having a first edge adjacent to the plurality of gate structures and a second edge on a side of the termination structure opposite the first edge. Each of the plurality of gate structures has a curved edge adjacent to the first edge of the termination structure, and the second edge of the termination structure is curved concave to the curved edges of the plurality of gate structures.


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